Pb free Taiwan Semiconductor BAV70 RFG high speed switching diode with RoHS compliance and SOT 23 package
Key Attributes
Model Number:
BAV70 RFG
Product Custom Attributes
Reverse Recovery Time (trr):
6ns
Pd - Power Dissipation:
225mW
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
70V
Diode Configuration:
1 Pair Common Cathode
Reverse Leakage Current (Ir):
2.5uA@70V
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV70 RFG
Package:
SOT-23
Product Description
Product Overview
High-speed switching diodes designed for surface mount applications. These Pb-free and RoHS compliant devices feature a green compound (Halogen free) construction and are suitable for high-temperature soldering.
Product Attributes
- Brand: Taiwan Semiconductor
- Device Type: Surface mount device
- Moisture Sensitivity Level: 1
- Lead Finish: Matte Tin(Sn) with Nickel(Ni) underplate
- Compliance: Pb free and RoHS compliant
- Compound: Green compound (Halogen free)
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed
- Soldering: High temperature soldering guaranteed: 260oC/10s
- Weight: 0.008grams (approximately)
Technical Specifications
| PARAMETER | SYMBOL | UNIT | BAW56/BAV70 | BAV99 | Note |
| Peak repetitive reverse voltage | VRRM | V | 70 | 70 | |
| Mean forward current | IO | mA | 200 | 200 | |
| Repetitive peak forward current | IFRM | mA | 450 | 450 | |
| Non-repetitive peak forward surge current | IFSM | A | 2.50 | 1.5 | Pulse Width=1 sec |
| Power dissipation | PD | mW | 225 | 225 | TA=25 |
| Thermal resistance form junction to ambient | RJA | oC/W | 556 | 556 | |
| Junction and storage temperature range | TJ , TSTG | oC | -55 to + 150 | -55 to + 150 | |
| Forward voltage | VF | V | 1.00 | 1.00 | IF = 50 mA |
| Reverse leakage current | IR | A | 1.00 | 1.00 | VR = 70 V |
| Junction capacitance | CJ | pF | 4 | 4 | VR = 0 V, f = 1 MHz |
| Reverse revovery time | trr | ns | 6 | 6 | IF = 150 mA, VR = 70 V, IRR = 1 mA |
2304140030_Taiwan-Semiconductor-BAV70-RFG_C486016.pdf
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