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quality high voltage PNP transistor Slkor MMBTA92 ideal for general purpose amplification and switching tasks factory
quality high voltage PNP transistor Slkor MMBTA92 ideal for general purpose amplification and switching tasks factory

high voltage PNP transistor Slkor MMBTA92 ideal for general purpose amplification and switching tasks

Key Attributes
Model Number: MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
DC Current Gain:
100@10mA,10V
Transition Frequency(fT):
50MHz
Vce Saturation(VCE(sat)):
200mV
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description

Product Overview

The MMBTA92 is a high voltage PNP transistor designed for general-purpose applications. It offers robust performance with high breakdown voltages and a continuous collector current of up to 200 mA. This transistor is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: slkormicro (implied from URL)
  • Model: MMBTA92
  • Type: PNP Transistor
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -300 V
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -200 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
Thermal Resistance Junction To Ambient RJA 417 /W
Collector Current - Pulsed ICM -500 mA
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -300 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-200V, IE=0 -0.25 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
DC current gain hFE(1) VCE= -10V, IC= -1mA 60
hFE(2) VCE= -10V, IC=-10mA 100 200
hFE(3) VCE= -10V, IC=-30mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V
Transition frequency fT VCE=-20V, IC= -10mA, f=30MHz 50 MHz
Pin 1 (SOT-23) BASE
Pin 2 (SOT-23) EMITTER
Pin 3 (SOT-23) COLLECTOR

Dimensions (SOT-23):

Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1 0.950 TYP 0.037 TYP
L 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8

2005211106_Slkor-MMBTA92_C556171.pdf

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