TOSHIBA TBD62084AFNGZEL 8 channel DMOS transistor array designed for high current inductive load switching
Key Attributes
Model Number:
TBD62084AFNG(Z,EL)
Product Custom Attributes
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-40℃~+85℃
Mfr. Part #:
TBD62084AFNG(Z,EL)
Package:
SOP-18
Product Description
Product Overview
The TBD62083A and TBD62084A series are 8-channel sink-type DMOS transistor arrays designed for switching inductive loads. Each output includes a built-in clamp diode for protection. These devices offer high voltage (up to 50V) and high current (up to 500mA/ch) capabilities, making them suitable for various applications requiring robust output driving.
Product Attributes
- Brand: TOSHIBA
- Type: BiCD Integrated Circuit Silicon Monolithic
- Material: Silicon
Technical Specifications
| Series | Model | Package Type | Package Name | Weight (Typ.) | Output Voltage (MAX) | Output Current (MAX/ch) | Input Voltage (Output ON) MIN | Input Voltage (Output OFF) MAX |
| TBD62083A / TBD62084A | TBD62083APG, TBD62084APG | PG | P-DIP18-300-2.54-001 | 1.3 g | 50 V | 500 mA | 2.5 V (TBD62083A) / 7.0 V (TBD62084A) | 0.6 V (TBD62083A) / 1.0 V (TBD62084A) |
| TBD62083A / TBD62084A | TBD62083AFG, TBD62084AFG | FG | SOP18-P-375-1.27 | 0.41 g | 50 V | 500 mA | 2.5 V (TBD62083A) / 7.0 V (TBD62084A) | 0.6 V (TBD62083A) / 1.0 V (TBD62084A) |
| TBD62083A / TBD62084A | TBD62083AFNG, TBD62084AFNG | FNG | SSOP18-P-225-0.65 | 0.09 g | 50 V | 500 mA | 2.5 V (TBD62083A) / 7.0 V (TBD62084A) | 0.6 V (TBD62083A) / 1.0 V (TBD62084A) |
| TBD62083A / TBD62084A | TBD62083AFWG, TBD62084AFWG | FWG | P-SOP18-0812-1.27-001 | 0.48 g | 50 V | 500 mA | 2.5 V (TBD62083A) / 7.0 V (TBD62084A) | 0.6 V (TBD62083A) / 1.0 V (TBD62084A) |
2411220247_TOSHIBA-TBD62084AFNG-Z-EL_C5370570.pdf
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