Low On Resistance N Channel MOSFET SL20N10 Suitable for Power Management and Display Inverter Circuits
Key Attributes
Model Number:
SL20N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-50℃~+150℃
RDS(on):
95mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.125nF@15V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
SL20N10
Package:
TO-252
Product Description
Product Overview
The SL20N10 is an N-Channel MOSFET featuring a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. It is designed for power management applications, including notebook power management, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: SLKORMicro
- Model: SL20N10
- Package: TO-252
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 | V |
| Drain-Source On-State Resistance | VGS=10V ID=12A | -- | 70.0 | 80.0 | m |
| Drain-Source On-State Resistance | VGS=4.5VID=10A | -- | 80.0 | 95.0 | m |
| Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 1125 | -- | pF |
| Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 85 | -- | pF |
| Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 55 | -- | pF |
| Total Gate Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 17 | -- | nC |
| Gate Source Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 7.5 | -- | nC |
| Gate Drain Charge | VDD=50VID=15A VGS=5VRG=4.7 | -- | 10 | -- | nC |
| Turn-on Delay Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 25 | -- | nS |
| Turn-on Rise Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 430 | -- | nS |
| Turn-Off Delay Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 45 | -- | nS |
| Turn-Off Fall Time | VDD=50VID=15A VGS=5VRG=4.7 | -- | 92 | -- | nS |
| Forward on voltage | Tj=25Is=15A | -- | -- | 1.2 | V |
| Common Ratings | |||||
| Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| Gate-Source Voltage | -- | -- | 20 | -- | V |
| Junction Temperature | -- | -- | -- | 150 | C |
| Storage Temperature Range | -- | -50 | -- | 155 | C |
| Continuous Drain Current | Tc=25C, Mounted on Large Heat Sink | -- | -- | 20 | A |
| Pulse Drain Current | -- | -- | -- | 75 | A |
| Tested Diode Continuous Forward Current | -- | -- | -- | 20 | A |
| Maximum Power Dissipation | Tc=25C, Mounted on Large Heat Sink | -- | -- | 45 | W |
| Single pulse Avalanche Energy | -- | -- | 15.3 | -- | mJ |
2409302204_Slkor-SL20N10_C2965547.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
