Glass passivated VISHAY MB4S E3 80 surface mount bridge rectifier designed for AC DC full wave rectification
Key Attributes
Model Number:
MB4S-E3/80
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@400mA
Current - Rectified:
500mA
Voltage - DC Reverse(Vr):
400V
Mfr. Part #:
MB4S-E3/80
Package:
MBS
Product Description
Product Overview
The Vishay General Semiconductor MB2S, MB4S, and MB6S are miniature glass-passivated fast recovery surface mount bridge rectifiers designed for general-purpose AC/DC full-wave rectification. These rectifiers offer space-saving benefits on printed circuit boards, are ideal for automated placement, and feature high surge current capability. They are suitable for applications such as power supplies, lighting ballasts, battery chargers, home appliances, office equipment, and telecommunication systems.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition, file number E54214
- Material: Molding compound meets UL 94 V-0 flammability rating
- Compliance: Meets MSL level 1, per J-STD-0020, LF maximum peak of 260 C
- Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102
- E3 suffix meets JESD 201 class 1A whisker test
- RoHS-compliant
Technical Specifications
| Parameter | Symbol | MB2S | MB4S | MB6S | Unit |
| Device marking code | 2 | 4 | 6 | ||
| Maximum repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | V |
| Maximum RMS voltage | VRMS | 140 | 280 | 420 | V |
| Maximum DC blocking voltage | VDC | 200 | 400 | 600 | V |
| Maximum average forward output rectified current on glass-epoxy PCB (1) | IF(AV) | 0.5 | A | ||
| Maximum average forward output rectified current on aluminum substrate (2) | IF(AV) | 0.8 | A | ||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load | IFSM | 35 | A | ||
| Rating for fusing (t < 8.3 ms) | I2t | 5.0 | As | ||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||
| Maximum instantaneous forward voltage per diode (IF = 0.4 A) | VF | 1.0 | V | ||
| Maximum DC reverse current per diode at rated DC blocking voltage (TA = 25 C) | IR | 5.0 | A | ||
| Maximum DC reverse current per diode (TA = 125 C) | IR | 100 | A | ||
| Typical junction capacitance per diode (4.0 V, 1 MHz) | CJ | 13 | pF | ||
| Typical thermal resistance (on glass epoxy PCB) | RJA (1) | 85 | C/W | ||
| Typical thermal resistance (on aluminum substrate) | RJA (2) | 70 | C/W | ||
| Typical thermal resistance (lead) | RJL (1) | 20 | C/W | ||
2410121733_VISHAY-MB4S-E3-80_C145443.pdf
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