Switching diode Taiwan Semiconductor BAS116 RFG 200mA 75V SMD diode ideal for DC DC converters and lighting
Product Overview
The BAS116 is a 200mA, 75V switching SMD diode from Taiwan Semiconductor, designed for high efficiency and low power loss. It is ideal for automated placement, offers high surge current capability, and is compliant with RoHS and Halogen-free standards. This diode is suitable for various applications including switching mode power supplies, adapters, lighting, and on-board DC/DC converters.
Product Attributes
- Brand: Taiwan Semiconductor
- Model: BAS116
- Package: SOT-23
- Certifications: RoHS Compliant, Halogen-free according to IEC 61249-2-21
- Moisture Sensitivity Level: Level 1, per J-STD-020
- Flammability Rating: UL 94 V-0
- Terminal Finish: Matte tin plated leads, solderable per J-STD-002
- Whisker Test: Meet JESD 201 class 1A
- Weight: 8mg (approximately)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Mean Forward Current | IO | 200 | mA | |
| Repetitive Peak Reverse Voltage | VRRM | 75 | V | |
| Forward Voltage | VF | 1.25 | V | IF=150mA, TJ = 25C |
| Junction Temperature Max. | TJ Max. | 150 | C | |
| Power Dissipation | PD | 225 | mW | TA = 25C |
| Non-Repetitive Peak Forward Surge Current | IFSM | 500 | mA | @ t=1s |
| Thermal Resistance (Junction to Ambient) | RJA | 330 | C/W | Note1 |
| Junction Temperature Range | TJ | -55 to +150 | C | |
| Storage Temperature Range | TSTG | -55 to +150 | C | |
| Forward Voltage | VF | 0.9 | V | IF = 1.0mA, TJ = 25C |
| Forward Voltage | VF | 1.0 | V | IF = 10mA, TJ = 25C |
| Forward Voltage | VF | 1.1 | V | IF = 50mA, TJ = 25C |
| Reverse Current | IR | 5 | nA | VR=75V, TJ = 25C |
| Reverse Current | IR | 80 | nA | VR=75V, TJ = 150C |
| Junction Capacitance | CJ | 2.0 | pF | f=1 MHz, VR=0V |
| Reverse Recovery Time | trr | 3.0 | s | IF=10mA, IR=10mA, RL=100, Irr=1mA |
2504101957_Taiwan-Semiconductor-BAS116-RFG_C17239457.pdf
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