Low VF and Capacitance Schottky Diode Taiwan Semiconductor BAS40-06 RFG for Surface Mount Technology
Key Attributes
Model Number:
BAS40-06 RFG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max):
46V
Diode Configuration:
1 Pair Common Anode
Reverse Leakage Current (Ir):
200nA@30V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40-06 RFG
Package:
SOT-23
Product Description
Product Overview
The BAS40 series are 200mW, low VF SMD Schottky Barrier Diodes designed for surface mounting. They feature low capacitance, low forward voltage drop, and low stored charge, making them suitable for applications such as adapters and switching power supplies. These diodes are compliant with RoHS directive 2011/65/EU and WEEE 2002/96/EC, and are halogen-free.
Product Attributes
- Brand: Taiwan Semiconductor
- Series: BAS40 / -04 / -05 / -06
- Material: Molding compound UL flammability classification rating 94V-0
- Certifications: RoHS directive 2011/65/EU, WEEE 2002/96/EC, Halogen-free according to IEC 61249-2-21, JESD 201 class 1A whisker test
- Color: Green compound (halogen-free) when packing code suffix "G" is used
- Package: SOT-23
- Moisture Sensitivity Level: Level 1, per J-STD-020
- Terminal: Matte tin plated leads, solderable per J-STD-002
Technical Specifications
| Parameter | Symbol | BAS40 | BAS40-04 | BAS40-05 | BAS40-06 | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 40 | V | ||||
| Forward current | IF(AV) | 200 | mA | ||||
| Non-repetitive peak forward surge current @ t = 8.3ms | IFSM | 0.6 | A | ||||
| Junction temperature range | TJ | -65 to +125 | C | ||||
| Storage temperature range | TSTG | -65 to +125 | C | ||||
| Marking code on the device | 43 | 44 | 45 | 46 | |||
| Forward voltage per diode | VF | - | V | IF = 1mA, TJ = 25C | |||
| Forward voltage per diode | VF | 1.00 | V | IF = 40mA, TJ = 25C | |||
| Reverse current @ rated VR per diode | IR | - 0.2 | A | VR=30V TJ = 25C | |||
| Reverse Breakdown Voltage | V(BR) | 40 - | V | IR=10A | |||
| Junction capacitance | CJ | - 5.0 | pF | 1 MHz, VR=1V | |||
| Reverse Recovery Time | trr | - 5.0 | ns | IF=IR=10mA, RL=100, IRR=1mA | |||
| Junction-to-ambient thermal resistance | RJA | 357 | C/W | ||||
2002251108_Taiwan-Semiconductor-BAS40-06-RFG_C486010.pdf
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