Suzhou GoodArk Elec GSBC857CW SOT323 Package PNP Transistor for Switching and Amplifier Applications

Key Attributes
Model Number: GSBC857CW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
650mV@100mA,5mA
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
GSBC857CW
Package:
SOT-323
Product Description

Product Overview

The GSBC857xW is a PNP transistor in a SOT-323 package, ideally suited for automatic insertion. It is designed for switching and AF amplifier applications.

Product Attributes

  • Brand: Goodarksemi (implied by URL)
  • Package: SOT-323

Technical Specifications

ParameterSymbolGSBC857AWGSBC857BWGSBC857CWUnitTest Condition
Collector - Base Breakdown VoltageV(BR)CBO-50--VIC=-10uA, IE=0
Collector - Emitter Breakdown VoltageV(BR)CEO-45--VIC=-10mA, IB=0
Emitter - Base Breakdown VoltageV(BR)EBO-5--VIE=-1uA, IC=0
Collector Cut - Off CurrentICBO--15nAVCB=-30V, IE=0
Collector - Emitter Saturation VoltageVCE(sat)--0.65VVCE=-5V, IC=-10mA
Base - Emitter Saturation VoltageVBE(sat)--1.1VVCE=-5V, IC=-10mA
Transition FrequencyfT100--MHzVCE=-5V, IC=-10mA, F=100MHz
Collector Output CapacitanceCob-4.5pFVCB=-10V, F=1MHz
DC Current GainhFE125220420-IC=-100mA, IB=-5mA
DC Current GainhFE250475800-IC=-100mA, IB=-5mA
Collector Current - ContinuousIC-100--mA
Collector Power DissipationPC150--mWTA=25C
Junction TemperatureTJ150--C
Storage TemperatureTSTG150--C
Thermal Resistance from Junction to AmbientRJA833--C/W

2411201842_Suzhou-Good-Ark-Elec-GSBC857CW_C19841089.pdf

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