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quality Matte Tin Plated Terminals Taiwan Semiconductor BC337-16 A1G NPN Transistor High Temperature Soldering factory
quality Matte Tin Plated Terminals Taiwan Semiconductor BC337-16 A1G NPN Transistor High Temperature Soldering factory

Matte Tin Plated Terminals Taiwan Semiconductor BC337-16 A1G NPN Transistor High Temperature Soldering

Key Attributes
Model Number: BC337-16 A1G
Product Custom Attributes
Mfr. Part #:
BC337-16 A1G
Product Description

Product Overview

The BC337 and BC338 series are NPN transistors designed for switching and AF amplifier applications. These devices are available in a TO-92 small outline plastic package and feature green compound (Halogen free) construction. They are moisture sensitivity level 1, Pb-free, and RoHS compliant, with terminals matte tin plated and solderable per MIL-STD-202, Method 208. High temperature soldering is guaranteed at 260C/10s. These transistors are subdivided into three current gain groups: -16, -25, and -40.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Origin: Taiwan Semiconductor
  • Material: Green compound (Halogen free)
  • Color: Green (indicated by 'G' on packing code and prefix 'G' on date code)
  • Certifications: Pb free and RoHS compliant
  • Package: TO-92 small outline plastic package
  • Terminals: Matte tin plated, lead free

Technical Specifications

ParameterSymbolBC337-16/25/40 thru BC338-16/25/40UnitConditions
Collector-Emitter Breakdown VoltageV(BR)CEO50VIC= 2mA
Collector-Base Breakdown VoltageV(BR)CBO50VIC= 100A
Emitter-Base Breakdown VoltageV(BR)EBO5VIE= 100A
Collector CurrentIC625mA
Peak Collector CurrentICM800mA
Collector-Emitter VoltageVCEO45V
Collector-Base VoltageVCBO45V
Emitter-Base VoltageVEBO5V
Total Power DissipationPTOT625mW(TA=25 unless otherwise noted)
Junction and Storage Temperature RangeTJ , TSTG-55 to +150C
Collector-Emitter Saturation VoltageVCE(sat)0.7VVCE= 5V, IC= 300mA
Base Emitter On VoltageVBE(on)1.2VVCE= 5V, IC= 10mA, f=50MHz
Transition FrequencyfT100MHzVCE= 1V, IC= 300mA
Output CapacitanceCob25pFVCB=10V, f=1MHz
DC Current GainhFE16-25-40-Current Gain Group
DC Current GainhFE100-VCE= 5V, IC= 100mA
DC Current GainhFE250-VCE= 5V, IC= 500mA, IB=50mA
Collector Base Cutoff CurrentICBO100nAVCB=50V
Collector Base Cutoff CurrentICBO250nAVCB=30V

2411081129_Taiwan-Semiconductor-BC337-16-A1G_C20999593.pdf

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