Surface Mount Rectifier Taiwan Semiconductor ES1D-T R3g Compliant with RoHS and Halogen Free Standards
Key Attributes
Model Number:
ES1D-T R3g
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
200V
Reverse Leakage Current (Ir):
5uA@200V
Voltage - Forward(Vf@If):
950mV@1A
Current - Rectified:
1A
Mfr. Part #:
ES1D-T R3g
Package:
SMA
Product Description
Product Overview
The ES1D-T to ES1J-T series are surface mount super fast rectifiers from Taiwan Semiconductor. Featuring a glass passivated junction chip and ideal for automated placement, these rectifiers offer super fast recovery times for high efficiency. They are compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC, and are halogen-free according to IEC 61249-2-21. Applications include switching mode power supplies (SMPS), adapters, lighting, and converters.
Product Attributes
- Brand: Taiwan Semiconductor
- Series: ES1D-T - ES1J-T
- Material: Glass passivated junction chip, Molding compound meets UL 94V-0 flammability rating
- Color: Green compound (halogen-free) when packing code suffix is "G"
- Certifications: RoHS Directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free), J-STD-020 (Moisture sensitivity level 1), J-STD-002 (Solderable leads), JESD 201 class 1A (Whisker test)
Technical Specifications
| Parameter | Symbol | ES1D-T | ES1G-T | ES1J-T | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 200 | 400 | 600 | V | |
| Reverse voltage, total rms value | VR(RMS) | 140 | 280 | 420 | V | |
| Maximum DC blocking voltage | VDC | 200 | 400 | 600 | V | |
| Forward current | IF(AV) | 1 | A | |||
| Surge peak forward current | IFSM | 30 | A | 8.3 ms single half sine-wave | ||
| Junction temperature | TJ | 150 | C | MAX | ||
| Storage temperature | TSTG | -55 to +150 | C | |||
| Forward voltage per diode | VF | - 0.95 | - 1.30 | - 1.70 | V | IF =1A, TJ=25C |
| Reverse current @ rated VR per diode | IR | 5 | A | TJ = 25C | ||
| Reverse current @ rated VR per diode | IR | 100 | A | TJ =125C | ||
| Junction capacitance | CJ | 16 | 18 | - | pF | 1 MHz, VR=4.0V |
| Reverse recovery time | trr | 35 | ns | IF=0.5A , IR=1.0A IRR=0.25A | ||
| Junction-to-ambient thermal resistance | RJA | 85 | C/W | TYP | ||
| Junction-to-lead thermal resistance | RJL | 35 | C/W | TYP | ||
2409272232_Taiwan-Semiconductor-ES1D-T-R3g_C486162.pdf
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