Silicon Planar Zener Diode Wild Goose BZT52C6V8S with Wide Voltage Range and 200mW Power Dissipation
Key Attributes
Model Number:
BZT52C6V8S
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA@4V
Pd - Power Dissipation:
200mW
Impedance(Zzt):
15Ω
Diode Configuration:
1 Independent
Zener Voltage(Range):
6.4V~7.2V
Zener Voltage(Nom):
6.8V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52C6V8S
Package:
SOD-323
Product Description
Product Overview
Silicon Planar Zener Diodes designed for automated assembly processes. These diodes offer a wide zener reverse voltage range from 2.4V to 43V and a maximum total power dissipation of 200mW. Ideally suited for various electronic applications requiring stable voltage reference.
Product Attributes
- Brand: WildGoose Semiconductor
- Package: SOD-323
- Material: Silicon Planar
Technical Specifications
| Type Marking | Zener Voltage Range (V) | ZT (mA) | ZZT () | IR (A) | VF (V) | RJA (C/W) | Tj (C) | Tstg (C) |
| BZT52C2V4S | 2.4 - 2.6 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C2V7S | 2.7 - 2.9 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C3V0S | 3.0 - 3.2 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C3V3S | 3.3 - 3.5 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C3V6S | 3.6 - 3.8 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C3V9S | 3.9 - 4.1 | 1 | 700 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C4V3S | 4.3 - 4.6 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C4V7S | 4.7 - 5.0 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C5V1S | 5.1 - 5.4 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C5V6S | 5.6 - 6.0 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C6V2S | 6.2 - 6.6 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C6V8S | 6.8 - 7.2 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C7V5S | 7.5 - 7.9 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C8V2S | 8.2 - 8.7 | 1 | 600 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C9V1S | 9.1 - 9.6 | 1 | 500 | 100 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C10S | 10.0 - 10.6 | 1 | 480 | 50 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C11S | 11.0 - 11.6 | 1 | 400 | 20 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C12S | 12.0 - 12.7 | 1 | 150 | 10 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C13S | 13.0 - 14.1 | 1 | 80 | 5 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C15S | 15.0 - 15.6 | 1 | 80 | 5 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C16S | 16.0 - 17.1 | 1 | 80 | 5 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C18S | 18.0 - 19.1 | 1 | 100 | 3 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C20S | 20.0 - 21.2 | 1 | 150 | 3 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C22S | 22.0 - 23.3 | 1 | 150 | 3 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C24S | 24.0 - 25.6 | 1 | 150 | 3 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C27S | 27.0 - 28.9 | 1 | 170 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C30S | 30.0 - 32.0 | 1 | 200 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C33S | 33.0 - 35.0 | 1 | 200 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C36S | 36.0 - 38.0 | 1 | 225 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C39S | 39.0 - 41.0 | 1 | 250 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
| BZT52C43S | 43.0 - 46.0 | 1 | 300 | 2 | 0.9 | 625 | 150 | -55 ~ +150 |
2410121737_Wild-Goose-BZT52C6V8S_C22368930.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
