650V 15A Trench Field Stop IGBT SPTECH IRGB4620D optimized for short circuit withstand and soft switching inverter

Key Attributes
Model Number: IRGB4620D
Product Custom Attributes
Pd - Power Dissipation:
27W
Td(off):
60ns
Operating Temperature:
-40℃~+150℃
Td(on):
15ns
Collector-Emitter Breakdown Voltage (Vces):
650V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@250uA
Gate Charge(Qg):
92nC@15V
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
100uJ
Turn-On Energy (Eon):
750uJ
Mfr. Part #:
IRGB4620D
Package:
TO-220MF
Product Description

IRGB4620D 650V / 15A Trench Field Stop IGBT

The IRGB4620D is a 650V, 15A Trench Field Stop IGBT designed for high-reliability applications. It features a high breakdown voltage, short circuit rating, and very low saturation voltage (VCE(SAT) = 1.65V Typ. @ IC = 15A). Its soft current turn-off waveforms make it suitable for soft switching applications, air conditioning, and motor drive inverters.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum RatingsVCE650V-
IC30 / 15ADC collector current, limited by Tjmax, TC = 25C / 100C
IF30 / 15ADiode Forward current, limited by Tjmax, TC = 25C / 100C
VGE±20 / ±30VContinuous / Transient Gate-emitter voltage
ICM45APulsed collector current, VGE=15V, tp limited by Tjmax
Tsc5µsShort Circuit Withstand Time, VGE= 15V, VCE≤ 400V
Ptot27WPower dissipation , Tj=25°C
Thermal ResistanceRθ(j-c)4.9K/WIGBT thermal resistance, junction - case
Rθ(j-c)5.8K/WDiode thermal resistance, junction - case
Rθ(j-a)62.5K/WThermal resistance, junction - ambient
Electrical Characteristics (IGBT)BVCES650VVGE = 0V, IC = 1mA
VCE(SAT)1.65 / 1.95VIC = 15A, VGE = 15V (Typ. / Max.)
VGE(th)4.1 / 5.0 / 5.7VVGE = VCE, IC = 250µA (Min. / Typ. / Max.)
ICES-10µAVCE = 650V, VGE = 0V (Max.)
IGES-±200nAVGE = ±20V, VCE = 0V (Max.)
gfs10SVCE=20V, IC=15A (Typ.)
Dynamic Characteristics (IGBT)Cies1910pFVCE = 25V, VGE = 0V, f = 1MHz (Typ.)
Coes80pF- (Typ.)
Cres46pF- (Typ.)
QG92nCVCC = 480V, IC = 15A, VGE = 15V (Typ.)
Switching Characteristics (Inductive Load)td(on)15nsVCC = 400V, IC = 15A, VGE = 0/15V, Rg=12Ω, Tj=25°C (Typ.)
tr25ns- (Typ.)
td(off)60ns- (Typ.)
tf46ns- (Typ.)
Eon0.75mJ- (Typ.)
Eoff0.1mJ- (Typ.)
Electrical Characteristics (DIODE)VFM1.7VIF = 15A (Typ.)
Trr50nsIF= 15A, VR = 300V, di/dt =200A/µs (Typ.)
Irr4A- (Typ.)
Qrr83nC- (Typ.)

2505231205_SPTECH-IRGB4620D_C5369319.pdf

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