High Current NPN Transistor Suzhou Good-Ark Elec GSBCX56-16 Designed for Audio Amplifier Driver Stage
Key Attributes
Model Number:
GSBCX56-16
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Transition Frequency(fT):
130MHz
Type:
NPN
Vce Saturation(VCE(sat)):
500mV@0.5A,50mA
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
GSBCX56-16
Package:
SOT-89-3L
Product Description
Product Overview
The GSBCX54-55-56 series are NPN transistors designed for driver stages of audio amplifiers. They offer low voltage and high current capabilities, with NPN complements to the GSBCX51, GSBCX52, and GSBCX53 series. These transistors are available in a SOT-89-3L package.
Product Attributes
- Brand: Goodarksemi (inferred from URL)
- Package: SOT-89-3L
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | GSBCX54 | GSBCX55 | GSBCX56 | Unit | Test Conditions |
| Collector-Emitter Voltage | VCEO | 45 | 60 | 100 | V | IC=10mA,IB=0 |
| Collector-Base Voltage | VCBO | 45 | 60 | 80 | V | IE=100A,IC=0 |
| Emitter-Base Voltage | VEBO | 5 | 5 | 5 | V | IC=0 |
| Collector Current | IC | 1 | 1 | 1 | A | |
| Base Current Peak | IBM | 0.1 | 0.1 | 0.1 | A | (tp<1ms) |
| Collector Power Dissipation | PC | 0.2 | 0.2 | 0.2 | A | |
| Collector Power Dissipation | PC | 500 | 500 | 500 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 250 | 250 | 250 | /W | |
| Junction Temperature | TJ | 150 | 150 | 150 | ||
| Storage Temperature | TSTG | -55 to +150 | -55 to +150 | -55 to +150 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | 5 | 5 | V | VEB=5V,IC=0 |
| Collector Cut- Off Current | ICBO | 0.1 | 0.1 | 0.1 | A | VCB=30V,IE=0 |
| Emitter Cut-Off Current | IEBO | 0.1 | 0.1 | 0.1 | A | IE=100A,IC=0 |
| DC Current Gain | hFE(1) | 40 | 40 | 40 | VCE=2V, IC=0.5A | |
| DC Current Gain | hFE(2) | 63 | 63 | 63 | VCE=2V, IC=0.5A | |
| DC Current Gain | hFE(2) | 250 | 160 | 250 | VCE=2V, IC=0.5A | |
| DC Current Gain | hFE(3) | 25 | 25 | 25 | VCE=2V, IC=150mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | 0.5 | 0.5 | V | IC=0.5A,IB=50mA |
| Base -Emitter Voltage | VBE | 1 | 1 | 1 | V | VCE=2V, IC=5mA |
| Transition Frequency | fT | 130 | 130 | 130 | MHz | VCE=5V,IC=10mA, f=100MHz |
| Collector-Base Breakdown Voltage | V(BR)CBO | 45 | 60 | 100 | V | IC=100A,IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 45 | 60 | 80 | V | IC=10mA,IB=0 |
2411201840_Suzhou-Good-Ark-Elec-GSBCX56-16_C19841098.pdf
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