Surface Mount Fast Switching Diode Taiwan Semiconductor BAV19WS-G RRG for Small Signal Applications
Key Attributes
Model Number:
BAV19WS-G RRG
Product Custom Attributes
Reverse Recovery Time (trr):
50ns
Pd - Power Dissipation:
200mW
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Reverse Leakage Current (Ir):
100nA@120V
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV19WS-G RRG
Package:
SOD-323
Product Description
Product Overview
The BAV19WS-G/BAV20WS-G/BAV21WS-G series are surface mount fast switching diodes designed for general purpose small signal switching applications. They feature fast switching speeds, a high conductance, and are ideally suited for automatic insertion. The green compound (halogen-free) option ensures compliance with environmental regulations.
Product Attributes
- Brand: Taiwan Semiconductor
- Color: Green compound (halogen-free)
- Certifications: Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Technical Specifications
| Parameter | Unit | BAV19WS-G | BAV20WS-G | BAV21WS-G |
| Average Rectified Output Current | mA | 200 | 200 | 200 |
| Repetitive Peak Reverse Voltage | V | 100 | 150 | 200 |
| DC Reverse Voltage | V | 100 | 150 | 200 |
| Repetitive Peak Forward Surge Current | A | 0.5 | 0.5 | 0.5 |
| Non-Repetitive Peak Forward Surge Current | A | 2.5 | 2.5 | 2.5 |
| Junction and Storage Temperature Range | C | -65 to 150 | ||
| Power Dissipation | mW | 200 | ||
| Thermal Resistance Junction to Ambient | C/W | 625 | ||
| Forward Voltage (IF=100mA) | V | 1.00 | 1.00 | 1.00 |
| Forward Voltage (IF=200mA) | V | - | 1.25 | - |
| Reverse Leakage Current (Note 2) | nA | -5 | -50 | - |
| Breakdown Voltage (Note 1) | V | 120 | 200 | 250 |
| Junction Capacitance (VR=0, f=1.0MHz) | pF | - | - | 10 |
| Reverse Recovery Time (Note 3) | ns | - | - | 4.0 |
2002251108_Taiwan-Semiconductor-BAV19WS-G-RRG_C486015.pdf
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