PNP Bipolar Transistor XZT BC807-25 High Current Gain and Low Saturation Voltage for AF Applications

Key Attributes
Model Number: BC807-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
160@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
700mV@500mA,50mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807-25
Package:
SOT-23
Product Description

Product Overview

The BC807 is a PNP bipolar transistor designed for general AF applications. It offers high collector current, high current gain, and a low collector-emitter saturation voltage. Its complementary NPN type is the BC817.

Product Attributes

  • Brand: X T ELECTRONICS
  • Website: http://www.xt-elec.com

Technical Specifications

ModelClassification (hFE Rank)VCBO (V)VCEO (V)VEBO (V)IC (mA)PC (mW)hFE (VCE=-1V, IC=-100mA)VCE(sat) (VCE=-1V, IC=-500mA, IB=-50mA)VBE(sat) (VCE=-1V, IC=-500mA, IB=-50mA)fT (VCE=-5V, IC=-10mA, f=100MHz) (MHz)
BC807-16100-250-50-45-5-500300100-600-0.7-1.2100
BC807-25160-400-50-45-5-500300100-600-0.7-1.2100
BC807-40250-600-50-45-5-500300100-600-0.7-1.2100

2410121541_XZT-BC807-25_C5805809.pdf

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