60V N Channel and P Channel Trench MOSFET VBsemi Elec IRF7343TRPBF VB designed for power applications
Key Attributes
Model Number:
IRF7343TRPBF-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V;55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
665pF@15V
Pd - Power Dissipation:
3.1W;3.4W
Gate Charge(Qg):
14.5nC@10V
Mfr. Part #:
IRF7343TRPBF-VB
Package:
SO-8
Product Description
Product Overview
The IRF7343TRPBF-VB is a 60-V N- and P-Channel Trench Power MOSFET designed for various applications including CCFL inverters. It features 100% Rg and UIS tested, and is halogen-free. This MOSFET offers low on-state resistance and efficient performance.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free According to IEC 61249-2-21 Available
Technical Specifications
| Parameter | N-Channel | P-Channel | Unit |
| VDS (V) | 60 | -60 | V |
| RDS(on) () at VGS = 10 V / -10 V | 0.026 | 0.055 | |
| RDS(on) () at VGS = 4.5 V / -4.5 V | 0.029 | 0.060 | |
| ID (A) at TC = 25 C | 5.3 | -4.9 | A |
| Qg (Typ.) | 6 | 8 | nC |
| Package | SO-8 | SO-8 |
2504180925_VBsemi-Elec-IRF7343TRPBF-VB_C558150.pdf
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