High surge current SCR WeEn WCR03-12WMX in SOT223 and TO92 packages for flexible mounting options
Key Attributes
Model Number:
WCR03-12WMX
Product Custom Attributes
Mfr. Part #:
WCR03-12WMX
Package:
SOT-223
Product Description
Product Overview
The WCR03 Series SCR is a planar passivated SCR with a sensitive gate, available in both surface mountable plastic (SOT223) and through-hole (TO92) packages. Designed for direct interfacing with microcontrollers, logic integrated circuits, and other low-power gate trigger circuits, it offers high surge current capability, voltage ruggedness, and reliability. This SCR is ideal for applications such as GFCI, AFCI, RCD, RCBO, and AFDD.
Product Attributes
- Brand: WeEn Semiconductors
- Certifications: RoHS, Lead-Free, Green, Halogen-Free
Technical Specifications
| Symbol | Parameter | Conditions | Values | Unit |
| VDRM, VRRM | Repetitive peak off-state/reverse voltage | RGK = 1 k; Tj(init) = 25 C | 1250 | V |
| IT(RMS) | RMS on-state current | half sine wave; Tlead 83 C (TO92) / Tc 110 C (SOT223) | 1.25 | A |
| IT(AV) | Average on-state current | half sine wave; Tlead 83 C (TO92) / Tc 110 C (SOT223) | 0.8 | A |
| ITSM | Non-repetitive peak on-state current | half sine wave; Tj(init) = 25 C; tp = 10 ms | 20 | A |
| ITSM | Non-repetitive peak on-state current | half sine wave; Tj(init) = 25 C; tp = 8.3 ms | 22 | A |
| It | It for fusing | tp = 10 ms; sine-wave pulse | 2 | As |
| dIT/dt | Rate of rise of on-state current | IG = 0.2 mA | 100 | A/s |
| IGT | Gate trigger current | VD = 12 V; RL = 100 ; Tj = 25 C | 90 | A |
| VGT | Gate trigger voltage | VD = 12 V; RL = 100 ; Tj = 25 C | 0.6 - 0.8 | V |
| IL | Latching current | IT = 0.1 A; RGK = 1 k; Tj = 25 C | 6 | mA |
| IH | Holding current | VD = 12 V; RGK = 1 k; Tj = 25 C | 5 | mA |
| VT | On-state voltage | IT = 1.25 A; Tj = 25 C | 1.3 | V |
| ID | Off-state current | VD = VDRM / VRRM; RGK = 1 k; Tj = 25 C | 1 | A |
| IR | Reverse current | Tj = 125 C | 100 | A |
| dVD/dt | Rate of rise of off-state voltage | VDM = 838 V; Tj = 125 C; RGK = 1 k; (VDM = 67% of VDRM); exponential waveform | 200 | V/s |
| Rth(j-lead) | Thermal resistance junction to lead | TO92 | 40 | K/W |
| Rth(j-lead) | Thermal resistance junction to case | SOT223 | 14 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | TO92 | 130 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | SOT223 | 120 | K/W |
| Tstg | Storage temperature | -40 to 150 | C | |
| Tj | Junction temperature | -40 to 125 | C |
2504101957_WeEn-WCR03-12WMX_C602721.pdf
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