Durable WEIDA BT151 Triacs Silicon Controlled Rectifiers with 12A RMS Current and 650V Voltage Rating
Key Attributes
Model Number:
BT151
Product Custom Attributes
Current - Gate Trigger(Igt):
30mA
Voltage - On State(Vtm):
1.75V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
120A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT151
Package:
TO-252
Product Description
Jiangsu Weida Semiconductor BT151 Series 12A Triacs
The BT151 series of silicon controlled rectifiers from Jiangsu Weida Semiconductor Co., Ltd. offers high current shock loading capability, a high dv/dt rate, and strong resistance to electromagnetic interference. These triacs are specifically recommended for applications such as solid-state relays, motorcycles, power chargers, and T-tools.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: BT151
- Product Type: Triacs
- Current Rating: 12A (RMS on-state current)
- Voltage Rating: 650V (VDRM/VRRM)
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| Repetitive peak off-state voltage | VDRM | 650 | V | Tj=25 |
| Repetitive peak reverse voltage | VRRM | 650 | V | Tj=25 |
| RMS on-state current | IT(RMS) | 12 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 120 | A | |
| I2t value for fusing (tp=10ms) | I2t | 72 | A2s | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2IGT |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Peak gate power | PGM | 5 | W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Gate trigger current | IGT | - 4 / 15 | mA | VD=12V, RL=33 |
| Gate trigger voltage | VGT | - 0.75 / 1.5 | V | |
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=110 |
| Gate holding current | IH | - - / 40 | mA | IG=1.2IGT |
| Rate of rise of off-state voltage | dV/dt | 200 | V/s | VD=2/3VDRM, Tj=125, Gate open |
| STATIC CHARACTERISTICS | ||||
| On-state voltage | VTM | MAX 1.75 | V | ITM=23A, tp=380s, Tj=25 |
| Off-state current | IDRM/IRRM | MAX 5 A | A | VD=VDRM=VRRM, Tj=25 |
| Off-state current | IDRM/IRRM | 0.5 mA | mA | Tj=110 |
| THERMAL RESISTANCES | ||||
| Junction to case (AC) | Rth(j-c) | 1.4 | /W | TO-251-4R/TO-252-4R |
| Junction to case (AC) | Rth(j-c) | 1.3 | /W | TO-220BNon-Ins/TO-220C |
| Junction to case (AC) | Rth(j-c) | 1.6 | /W | TO-220F |
| Junction to case (AC) | Rth(j-c) | 1.1 | /W | TO-263 |
| Junction to case (AC) | Rth(j-c) | 1.5 | /W | TO-220A(Ins) |
2409302203_WEIDA-BT151_C2900856.pdf
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