Triac Semiconductor WEIDA BT137-800E Featuring Low Holding Current for Medium Small Resistance Loads
Key Attributes
Model Number:
BT137-800E
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
100mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
8A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
65A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT137-800E
Package:
TO-252
Product Description
Product Overview
The BT137 Series Triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for middle and small resistance type power load applications. They feature low holding and latching current, making them highly recommended for such loads. These triacs are available in various packages including TO-220F, TO-263, TO-252-4R, TO-220B, TO-220C, and TO-220F (Insulated).
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BT137 Series
- Product Type: Triacs
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS On-State Current | IT(RMS) | 8 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800 | V | (Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 65 | A | (full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 21 | A2s | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 (--), 10 () | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 2 | A | |
| Average Gate Power Dissipation | PG(AV) | 0.5 | W | |
| Peak Gate Power | PGM | 5 | W | |
| On-State Voltage | VTM | 1.6 | V | (ITM=10A, tp=380s, Tj=25) |
| Off-State Current (IDRM/IRRM) | IDRM/IRRM | MAX 5 A (Tj=25), MAX 0.5 mA (Tj=125) | A/mA | (VDRM=VRRM) |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| Gate Trigger Current (IGT) | IGT | 5, 10, 25, 50 (--); 10, 25, 70, 100 () | mA | (VD=12V, RL=33) |
| Gate Trigger Voltage (VGT) | VGT | 1.3 | V | (---) |
| Gate Non-Trigger Voltage (VGD) | VGD | MIN 0.2 | V | (VD=VDRM, ---) |
| Holding Current (IH) | IH | 10, 20, 40, 60 (IT=100mA); 10, 30, 50, 70 (--); 20, 40, 70, 100 () | mA | |
| Rate of Rise of Commutation Voltage (dV/dt) | dV/dt | MIN 20, 50, 100, 200 | V/s | (VD=0.66VDRM, Tj=125, Gate open) |
| Junction to Case Thermal Resistance (Rth(j-c)) | Rth(j-c) | 1.8 (TO-220B/C), 2.0 (TO-252-4R), 2.8 (TO-220F), 3.0 (TO-263) | /W | (AC) |
2410122027_WEIDA-BT137-800E_C2901164.pdf
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