Power Switching Silicon N Channel Transistor XCH XCH2N65AG Enhanced VDMOSFET with RoHS Certification
Key Attributes
Model Number:
XCH2N65AG
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
3.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Pd - Power Dissipation:
32W
Output Capacitance(Coss):
31pF
Input Capacitance(Ciss):
290pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
XCH2N65AG
Package:
SOT223-3L
Product Description
Product Overview
The XCH2N65AG is a silicon N-Channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The product adheres to RoHS standards.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel
- Technology: Enhanced VDMOSFET, Self-aligned Planar
- Certifications: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) () | VGS(TH) (V) | Ciss (pF) | td(ON) (ns) | tr (ns) | td(OFF) (ns) | tf (ns) | Qg (nC) | trr (ns) | Qrr (nC) | RJC (/W) | RJA (/W) |
| XCH2N65AG | 650 | 2.0 (Tc=25) 1.45 (Tc=100) | 35 | 3.8 (typ) / 4.5 (max) | 2.0 (min) / 4.0 (max) | 290 (typ) | 8 (typ) | 6 (typ) | 30 (typ) | 11 (typ) | 9 (typ) | 425 (typ) | 1140 (typ) | 3.57 (typ) | 62 (typ) |
2508261745_XCH-XCH2N65AG_C7435478.pdf
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