Silicon N Channel MOSFET XCH 4N65F with 1.95 Ohm Typical RDS ON and 75W Power Dissipation Capability
Key Attributes
Model Number:
4N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.5Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
1 N-channel
Output Capacitance(Coss):
53pF
Input Capacitance(Ciss):
610pF@25V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
4N65F
Package:
TO-220F
Product Description
Product Description
The XCH4N65F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device is packaged in a TO-251 package and complies with RoHS standards.
Product Attributes
- Brand: XCH4N65F
- Material: Silicon N-Channel Power MOSFET
- Certifications: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (TC=25) (W) | RDS(ON)typ () | VGS(TH) (V) | Qg (nC) | RJC (/W) | RJA (/W) |
| XCH4N65F | 650 | 4 | 75 | 1.95 | 3.0 | 10 | 1.67 | 100 |
2305091657_XCH-4N65F_C5455844.pdf
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