Bridge Rectifier VISHAY GBU8J-E3/51 Glass Passivated Single Phase Designed for AC DC Full Wave Rectification
Key Attributes
Model Number:
GBU8J-E3/51
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1V@8A
Current - Rectified:
8A
Voltage - DC Reverse(Vr):
600V
Mfr. Part #:
GBU8J-E3/51
Package:
GBU
Product Description
Product Overview
The GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, and GBU8M are glass-passivated single-phase bridge rectifiers designed for general-purpose AC/DC full-wave rectification. They are ideal for printed circuit boards, offering high surge current capability and high case dielectric strength. These rectifiers are suitable for applications such as monitors, TVs, printers, power supplies, switching mode power supplies, adapters, audio equipment, and home appliances.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition file number E54214
- Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
- Case: GBU
- Molding compound meets UL 94 V-0 flammability rating
- Base P/N-E3: RoHS-compliant, commercial grade
- Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
- E3 suffix: Meets JESD 201 class 1A whisker test
- Polarity: As marked on body
Technical Specifications
| Parameter | Symbol | GBU8A | GBU8B | GBU8D | GBU8G | GBU8J | GBU8K | GBU8M | Unit |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified output current at TC = 60 C | IF(AV) (1) | 8.0 | A | ||||||
| Maximum average forward rectified output current at TA = 40 C | IF(AV) (2) | 3.9 | A | ||||||
| Peak forward surge current single sine-wave super-imposed on rated load | IFSM | 200 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 166 | A2s | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode at IF = 8.0 A | VF | 1.0 | V | ||||||
| Maximum DC reverse current per diode at rated DC blocking voltage, TA = 25 C | IR | 5.0 | A | ||||||
| Maximum DC reverse current per diode at rated DC blocking voltage, TA = 125 C | IR | 500 | A | ||||||
| Typical junction capacitance per diode at 4 V, 1 MHz | CJ | 68 | pF | ||||||
| Typical thermal resistance, junction to ambient (2) | RJA | 20 | C/W | ||||||
| Typical thermal resistance, junction to case (1)(3) | RJC | 4.0 | C/W | ||||||
2410121742_VISHAY-GBU8J-E3-51_C467547.pdf
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