Dual NPN Digital Transistor Featuring Built in Bias Resistors YANGJIE UMH10N for Circuit Performance

Key Attributes
Model Number: UMH10N
Product Custom Attributes
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV
Input Resistor:
2.86kΩ
Resistor Ratio:
26
Pd - Power Dissipation:
150mW
Mfr. Part #:
UMH10N
Package:
SOT-363
Product Description

Product Overview

The UMH10N is a Dual NPN Digital Transistor featuring built-in bias resistors. This design simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. Its surface mount package is well-suited for automatic insertion.

Product Attributes

  • Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
  • Origin: China (implied by company location)
  • Certifications: RoHS compliant, UL-94 V-0 flammability rating

Technical Specifications

ItemSymbolUnitConditionsMinTypMax
Maximum Ratings
Supply VoltageVCCV50
Input VoltageVINV-5+12
Output CurrentIOmA100
Power DissipationPDmW150
Junction Temperature (Single)Tj150
Storage TemperatureTSTG-55150
Electrical Characteristics
Input voltage (off)VI(off)VVCC=5V, Ic=100uA0.5-
Input voltage (on)VI(on)VVO=0.3V, Ic=5mA-1.1
Output voltage (on)Vo(on)VIo /Ii =5mA/0.25 mA-0.3
Input currentIImAVI=5V-3.6
Output current (off)IO(off)uAVCC=50V, Vi=0-0.5
DC current gainGIVo=5V, Io =10mA80-
Input resistanceR1k1.542.22.86
Resistance ratioR2/R1172126
Transition frequencyfTMHzVCE=10V,IE=5mA,f=100MHz-250-

2401111811_YANGJIE-UMH10N_C20605423.pdf

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