Slkor PCR406
Key Attributes
Model Number:
PCR406
Product Custom Attributes
Operating Temperature:
-40℃~+125℃
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
40uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
-
Current - On State(It(RMS)):
600mA
Peak Off - State Voltage(Vdrm):
400V
Current - Surge(Itsm@f):
-
SCR Type:
One Unidirectional Thyristor
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
PCR406
Package:
SOT-23
Product Description
Product Overview
Silicon Planar PNPN Thyristor D1 is a general-purpose switching device suitable for phase control applications and solid-state relays. It offers reliable performance for various switching needs.
Product Attributes
Brand
SLKORPackage Type
SOT-23Marking
PCR406 / PCR606Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| RMS on-state current | IT(RMS) | 0.6 | A |
| Junction Temperature | Tj | -40~+125 | |
| Storage Temperature | Tstg | -40~+150 | |
| Repetitive peak off-state voltage (PCR406) | VDRM | 400 | V |
| Repetitive peak off-state voltage (PCR606) | VDRM | 600 | V |
Electrical Characteristics
| Parameter | Symbol | Test conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| On state voltage | VTM | ITM=0.6A | - | 1.7 | V |
| Gate trigger voltage | VGT | VAK=7V | - | 0.8 | V |
| Repetitive peak off-state voltage (PCR406) | VDRM | IDRM= 10A | 400 | - | V |
| Repetitive peak off-state voltage (PCR606) | VDRM | IDRM= 10A | 600 | - | V |
| Holding current | IH | IT=600mA , IG=60mA | - | 5 | mA |
| Gate trigger current | IGT | VAK=7V | 5 | 40 | A |
7d0dc4b597fe0daf62b724af383b7758.pdf?productCode=C42380671
Related Products
Power MOSFET SLkor SL5N100D featuring 1000V breakdown and less than 4.2 milliohm on resistance rating
Product Overview The SL5N100 is an N-channel MOSFET designed for switching applications. It features a high breakdown voltage of 1000V, low on-resistance of less than 4.2 , and a continuous drain current of 5A. Key advantages include extremely high dv/dt capability, 100% avalanche tested, minimized ...
Trench Power MV MOSFET Technology Slkor 2SK3018W N Channel Enhancement Mode Field Effect Transistor
Product OverviewThe 2SK3018W is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It is designed as a voltage-controlled small signal switch with low input capacitance and fast switching speed. This ESD-protected device offers low input/output leakage...
SOT23 Package NChannel EnhancementMode MOSFET Slkor SL2302 Ideal for Switching and Amplification
SOT-23 N-Channel Enhancement-Mode MOS FETs This document details the specifications for SOT-23 N-Channel Enhancement-Mode MOS FETs. These devices are designed for various electronic applications requiring efficient switching and amplification. The SL2302 is a specific model within this product line. ...
N Channel Power MOSFET Slkor BSS123 with 100V Drain Source Voltage and 150mA Continuous Drain Current
Product OverviewThe BSS123 is an N-Channel Power MOSFET designed for various electronic applications. It offers robust performance with a maximum drain-source voltage of 100V and continuous drain current of 150mA.Product AttributesBrand: slkormicroModel: BSS123Package Type: SOT-23Technical ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
