Slkor BTW69-1200B
Key Attributes
Model Number:
BTW69-1200B
Product Custom Attributes
Holding Current (Ih):
200mA
Operating Temperature:
-40℃~+125℃
Current - Gate Trigger(Igt):
70mA
Voltage - On State(Vtm):
1.8V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
55A
Peak Off - State Voltage(Vdrm):
1.2kV
SCR Type:
-
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTW69-1200B
Package:
TO-3P
Product Description
Product Overview
The BTWG69 Series are Standard SCRs designed for various applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. They offer high current handling capabilities and reliable performance.
BrandSLKOR
SeriesBTWG69
Package TypeTO-3P Insulated
Key FeaturesITRMS: 55A, VGT: 1.5V, VDRM/VRRM: 1000V and 1200V
| Symbol | Parameter | Test Conditions | Value | Unit |
|---|---|---|---|---|
| VDRM | Repetitive Peak Off-State Voltage | BTWG69-1200B | 1200 | V |
| VRRM | Repetitive Peak Off-State Voltage | BTWG69-1600B | 1600 | V |
| IT(RMS) | R.M.S On-State Current | 55 | A | |
| IT(AV) | Average On-State Current | 35 | A | |
| ITSM | Surge On-State Current | F=50Hz, tp=10ms/8.3ms | 550 | A |
| It | It for fusing | Tp=10ms | 1500 | As |
| PG(AV) | Average Gate Power Dissipation | Tj=125C | 1 | W |
| PGM | Peak Gate Power Dissipation | Tj=125C | 10 | W |
| IGM | Peak Gate Current | tp=10us | 5 | A |
| Tj | Operating Junction Temperature | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | C | |
| IDRM | Repetitive Peak Off-State Current | Tc=25C | <10 | uA |
| IRRM | Repetitive Peak Reverse Current | Tc=25C | <8 | mA |
| IDRM | Repetitive Peak Off-State Current | Tc=125C | <10 | uA |
| IRRM | Repetitive Peak Reverse Current | Tc=125C | <8 | mA |
| IDRM | Repetitive Peak Off-State Current | IT=60A tp=380us | <1.8 | A |
| VGT | Forward "on" voltage | VD=VDRM,Tj=125C, RL=3.3K | 20.2 | V |
| IGT | Gate trigger voltage | IG=1.2IGT | <250 | mA |
| IH | Holding current | VD=12V ,IGT=0.1A | <200 | mA |
| VGT | Gate trigger voltage | VD=12V | <1.5 | V |
| IGT | Gate trigger current | VD=12V,IT=0.1A | <70 | mA |
| dv/dt | Critical-rate of rise of commutation voltage | VD=2/3VDRM,Tj=125C,gate open circuit | 2100 | V/s |
| di/dt | Critical-rate of rise of commutation current | IG=2XIG,tr100us, Tj=125C | 2150 | A/s |
| Rth(j-c) | Thermal resistance | Junction to case | 0.65 | C/W |
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