Dual NPN transistor amsem MMDT3904 designed for switching and AF amplifier applications epoxy package
Key Attributes
Model Number:
MMDT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3904
Package:
SOT-363-6L
Product Description
Product Overview
The MMDT3904 is a dual NPN small signal transistor designed for switching and AF amplifier applications. It features an epoxy package that meets UL 94 V-0 flammability rating and a lead-free, RoHS-compliant finish. This device is rugged and reliable.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China (implied by company name and website)
- Material: Epoxy package
- Certifications: UL 94 V-0 flammability rating, RoHS Compliant
Technical Specifications
| Device | Parameter | Test conditions | Min | Typ | Max | Unit |
| MMDT3904 | Collector-Base Voltage (VCBO) | 60 | V | |||
| Collector-Emitter Voltage (VCEO) | 40 | V | ||||
| Emitter-Base Voltage (VEBO) | 5 | V | ||||
| Collector Power Dissipation (PC) | (Ta = 25 ) | 200 | mW | |||
| Collector Current (IC) | 200 | mA | ||||
| Junction Temperature (TJ) | 150 | |||||
| Storage Temperature (TSTG) | -55 | 150 | ||||
| Collector-base breakdown voltage (V(BR)CBO) | Ic=10A,IE=0 | 60 | V | |||
| Collector-emitter breakdown voltage (V(BR)CEO) | Ic=1mA,IB=0 | 40 | V | |||
| Emitter-base breakdown voltage (V(BR)EBO) | IE=10A,IC=0 | 5 | V | |||
| Collector cut-off current (ICBO) | VCB=30V,IE=0 | 50 | nA | |||
| Emitter-Base Cutoff Current (IEBO) | VEB =5V, IC=0 | 50 | nA | |||
| MMDT3904 | Collector cut-off current (ICEX) | VCE=30V,VBE(off)=3V | 50 | nA | ||
| DC current gain (hFE) | VCE=1V,IC=0.1mA | 40 | ||||
| DC current gain (hFE) | VCE=1V,IC=1mA | 70 | ||||
| DC current gain (hFE) | VCE=1V,IC=10mA | 100 | 300 | |||
| DC current gain (hFE) | VCE=1V,IC=50mA | 60 | ||||
| DC current gain (hFE) | VCE=1V,IC=100mA | 30 | ||||
| Collector-emitter saturation voltage (VCE(sat)) | IC=10mA,IB=1mA | 0.2 | V | |||
| Collector-emitter saturation voltage (VCE(sat)) | IC=50mA,IB=5mA | 0.3 | V | |||
| Base-emitter saturation voltage (VBE(sat)) | IC=10mA,IB=1mA | 0.65 | 0.85 | V | ||
| Base-emitter saturation voltage (VBE(sat)) | IC=50mA,IB=5mA | 0.95 | V | |||
| MMDT3904 | Transition frequency (fT) | VCE=20V,IC=10mA,f=100MHz | 300 | MHZ | ||
| Collector output capacitance (Cob) | VCB=5V,IE=0,f=1MHz | 4 | pF | |||
| Noise figure (NF) | VCE=5V,Ic=0.1mA,f=1kHz,RS=1K | 5 | dB | |||
| Delay time (td) | VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA | 35 | nS | |||
| Rise time (tr) | VCC=3V, IC=10mA, IB1=-IB2=1mA | 35 | nS | |||
| MMDT3904 | Storage time (ts) | VCC=3V, IC=10mA, IB1=-IB2=1mA | 200 | nS | ||
| Fall time (tf) | VCC=3V, IC=10mA, IB1=-IB2=1mA | 50 | nS |
2410121327_amsem-MMDT3904_C7529051.pdf
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