Power Management Silicon N Channel MOSFET ANHI AUN065N10 with Low Gate Charge and Fast Recovery Diode
Key Attributes
Model Number:
AUN065N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
76A
RDS(on):
6.5mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
64pF@30V
Number:
1 N-channel
Pd - Power Dissipation:
91W
Input Capacitance(Ciss):
3.729nF@30V
Gate Charge(Qg):
67nC
Mfr. Part #:
AUN065N10
Package:
DFN-8(5x6)
Product Description
Product Overview
The AUN065N10 is a Silicon N-Channel MOSFET designed for applications such as synchronous rectification, power management, and load switching. It features proprietary new trench technology, a fast recovery body diode, and low gate charge to minimize switching loss. This MOSFET is packaged in a DFN5x6 and offers a drain-source breakdown voltage of 100V.
Product Attributes
- Brand: AUN
- Model: AUN065N10
- Technology: Silicon N-Channel MOS
- Package: DFN5x6
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1 - 3 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1000 | nA | VDS=100V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.0058 - 0.0065 | VGS=10V, ID=20A, Tj=25C | |
| Drain-source on-state resistance | RDS(on) | 0.0079 - 0.01 | VGS=4.5V, ID=20A, Tj=25C | |
| Input capacitance | Ciss | 3729 | pF | Vds=30V,Vgs=0V f=1MHz |
| Output capacitance | Coss | 1130 | pF | Vds=30V,Vgs=0V f=1MHz |
| Reverse transfer capacitance | Crss | 64 | pF | Vds=30V,Vgs=0V f=1MHz |
| Turn-on delay time | td(on) | 25 | ns | VDD=50V,VGS=10V,RG=6 ID=20A |
| Rise time | tr | 47 | ns | VDD=50V,VGS=10V,RG=6 ID=20A |
| Turn-off delay time | td(off) | 64 | ns | VDD=50V,VGS=10V,RG=6 ID=20A |
| Fall time | tf | 23 | ns | VDD=50V,VGS=10V,RG=6 ID=20A |
| Gate to source charge | Qgs | 13 | nC | VDS=50V,VGS=0 to 10V ID=20A |
| Gate to drain charge | Qgd | 14 | nC | VDS=50V,VGS=0 to 10V ID=20A |
| Gate charge total | Qg | 67 | nC | VDS=50V,VGS=0 to 10V ID=20A |
| Diode forward voltage | VSD | 1.0 | V | VGS=0V, IF=1A, Tj=25C |
| Continuous drain current | ID | 76 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 304 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 105 | mJ | - |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation | Ptot | 91 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Thermal resistance, junction - case | RthJC | 1.4 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 63 | C/W | device on PCB, minimal footprint |
2410121503_ANHI-AUN065N10_C5440027.pdf
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