High Voltage N Channel MOSFET ASA65R270E for in Power Supplies LCD TVs and LED Lighting Applications
Key Attributes
Model Number:
ASA65R270E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
270mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.8pF
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
1.16nF
Gate Charge(Qg):
23.2nC@10V
Mfr. Part #:
ASA65R270E
Package:
TO-220F
Product Description
Product Overview
The ASD65R270E and ASA65R270E are N-Channel Silicon MOSFETs designed for single-ended flyback or two-transistor forward topologies. These enhancement-mode MOSFETs are easy to control and feature low drain-source on-resistance. They are suitable for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) | Body diode dv/dt (V/ns) |
|---|---|---|---|---|---|---|---|
| ASD65R270E | TO252 | ASD65R270E | 700 | 270 | 23.2 | 58 | 50 |
| ASA65R270E | TO220F | ASA65R270E | 700 | 270 | 23.2 | 58 | 50 |
| Parameter | Symbol | Values (Min) | Values (Typ) | Values (Max) | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current | ID | - | - | 15 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - | - | 58 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 88 | mJ | Tc=25,VDD=50V, Iav=4.2A, L=10mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 4.2 | A | Tc=25,VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | - | - | 80 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - | - | 125 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | - |
| Operating junction temperature | Tj | -55 | - | 150 | C | - |
| Soldering Temperature | TL | - | - | 260 | C | Distance of 1.6mm from case for 10s |
| Reverse diode dv/dt | dv/dt | - | - | 50 | V/ns | VDS=0...400V, ISD<=58A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - | - | 0.99 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | - | - | 62 | C/W | device on PCB, minimal footprint |
| Drain-source breakdown voltage | V(BR)DSS | 650 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 | - | 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - | 236 | 270 | m | VGS=10V, ID=5.5A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 32 | - | f=1MHz, open drain | |
| Input capacitance | Ciss | - | 1160 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Output capacitance | Coss | - | 29.1 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Reverse transfer capacitance | Crss | - | 0.8 | - | pF | VGS=0V, VDS=400V, f=250kHz |
| Turn-on delay time | td(on) | - | 21.8 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Rise time | tr | - | 23.4 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Turn-off delay time | td(off) | - | 122.8 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Fall time | tf | - | 21.4 | - | ns | VDD=400V,VGS=13V,ID=5.2A, RG=10.2 |
| Gate to source charge | Qgs | - | 5.4 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - | 8.1 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Gate charge total | Qg | - | 23.2 | - | nC | VDD=400V, ID=5.2A, VGS=0 to 10V |
| Diode forward voltage | VSD | - | 0.74 | - | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | - | 210.5 | - | ns | VR=400V, IF=5.2A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 1.7 | - | uC | VR=400V, IF=5.2A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - | 18 | - | A | VR=400V, IF=5.2A, diF/dt=100A/s |
2410121530_ANHI-ASA65R270E_C18723000.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
