86--136 6733 2386
quality Silicon N Channel Enhancement Mode Transistor ANHI ASB70R380E Suitable for Power Supply Circuits factory
quality Silicon N Channel Enhancement Mode Transistor ANHI ASB70R380E Suitable for Power Supply Circuits factory

Silicon N Channel Enhancement Mode Transistor ANHI ASB70R380E Suitable for Power Supply Circuits

Key Attributes
Model Number: ASB70R380E
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
11A
RDS(on):
-
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
901pF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
22nC
Mfr. Part #:
ASB70R380E
Package:
TO-263
Product Description

Product Overview

The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. They are ideal for applications such as PC power supplies, PD adapters, LCD & PDP TVs, and LED lighting.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Channel Type: N-Channel
  • Mode: Enhancement Mode

Technical Specifications

Model Name Package Type Key Performance Parameter Value Unit
ASA70R380E TO220F VDS @ Tj,max 750 V
ASA70R380E TO220F RDS(on),max 0.38 m
ASA70R380E TO220F Qg,typ 22 nC
ASA70R380E TO220F ID,pulse 33 A
ASD70R380E TO252 VDS @ Tj,max 750 V
ASD70R380E TO252 RDS(on),max 0.38 m
ASD70R380E TO252 Qg,typ 22 nC
ASD70R380E TO252 ID,pulse 33 A
ASB70R380E TO263 VDS @ Tj,max 750 V
ASB70R380E TO263 RDS(on),max 0.38 m
ASB70R380E TO263 Qg,typ 22 nC
ASB70R380E TO263 ID,pulse 33 A
Parameter Symbol Value Unit Note / Test Condition
Drain-source breakdown voltage V(BR)DSS 705 V VGS=0V, ID=10mA
Gate threshold voltage V(GS)th 2.8 - 4.2 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 100 nA VDS=700V, VGS=0V, Tj=25C
Gate-source leakage current IGSS - 100 nA VGS=30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.346 - 0.38 VGS=10V,ID=5.5A,Tj=25C
Gate resistance RG 11.2 f=1MHz, open drain
Input capacitance Ciss 901 pF VGS=0V, VDS=50V, f=10kHz
Output capacitance Coss 59 pF VGS=0V, VDS=50V, f=10kHz
Reverse transfer capacitance Crss 5.3 pF VGS=0V, VDS=50V, f=10kHz
Turn-on delay time td(on) 7.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4
Rise time tr 20.8 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4
Turn-off delay time td(off) 29.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4
Fall time tf 19.2 ns VDD=400V,VGS=13V,ID=4.8A, RG=3.4
Gate to source charge Qgs 5.8 nC VDD=400V, ID=4.8A, VGS=0 to 10V
Gate to drain charge Qgd 17 nC VDD=400V, ID=4.8A, VGS=0 to 10V
Gate charge total Qg 22 nC VDD=400V, ID=4.8A, VGS=0 to 10V
Gate plateau voltage Vplateau 5.3 V VDD=400V, ID=4.8A, VGS=0 to 10V
Diode forward voltage VSD 0.74 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 250 ns VR=400V, IF=4.8 A, diF/dt=100A/s
Reverse recovery charge Qrr 2.572 uC VR=400V, IF=4.8 A, diF/dt=100A/s
Peak reverse recovery current Irrm 19.6 A VR=400V, IF=4.8 A, diF/dt=100A/s

2410121538_ANHI-ASB70R380E_C5440009.pdf

Related Products
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor factory
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
quality Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design factory
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.