ASA65R550E N Channel MOSFET transistor featuring low drain source on resistance for power switching
Key Attributes
Model Number:
ASA65R550E
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ
Gate Threshold Voltage (Vgs(th)):
3.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.55pF
Output Capacitance(Coss):
76pF
Input Capacitance(Ciss):
599pF
Pd - Power Dissipation:
178.1W
Gate Charge(Qg):
8nC
Mfr. Part #:
ASA65R550E
Package:
TO-220F
Product Description
Product Overview
The ASA65R550E, ASU65R550E, and ASD65R550E are N-Channel MOSFET transistors designed for high-efficiency power switching applications. These devices are optimized for boost PFC topologies, LCD & PD adaptors, and LED lighting. Key features include low drain-source on-resistance, easy gate control, and enhanced switching performance. They are suitable for forward or two-ended flyback converters and can be used in TV and LED lighting applications.
Product Attributes
- Brand: ASA
- Technology: Silicon
- Transistor Type: N-Channel
- Package Types: TO220F, TO251, TO252
Technical Specifications
| Model | VDS @ Tj,max | RDS(on),max | Qg,typ | ID,pulse | Body diode | Package | Marking |
|---|---|---|---|---|---|---|---|
| ASA65R550E | 550E | 0.50 (typ.) | 8.0 | 40 A | 50E | TO220F | ASA65R550E |
| ASU65R550E | 550E | 0.50 (typ.) | 8.0 | 40 A | 50E | TO251 | ASU65R550E |
| ASD65R550E | 550E | 0.50 (typ.) | 8.0 | 40 A | 50E | TO252 | ASD65R550E |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | - 0.50 - 0.55 | VGS=10V, ID=4A, Tj=25C | |
| Input capacitance | Ciss | - 599 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 76 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 3.55 | pF | VGS=0V, VDS=50V, f=10kHz |
| Gate to source charge | Qgs | - 2.6 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate to drain charge | Qgd | - 1.7 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate charge total | Qg | - 8.0 | nC | VDD=400V, ID=3A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | - 6.6 | V | VDD=400V, ID=3A, VGS=0 to 10V |
| Diode forward voltage | VSD | - 0.81 | V | VGS=0V, IF=3.8 A, Tj=25C |
| Reverse recovery time | trr | - 174 | ns | VR=400V, IF=3 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 1200 | nC | VR=400V, IF=3 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 13.5 | A | VR=400V, IF=3 A, diF/dt=100A/s |
| Package Type | RthJC (C/W) | RthJA (C/W) |
|---|---|---|
| TO220 FullPAK | 3.65 | 80 |
| TO251 and TO252 | 1.06 | 62 |
2410121257_ANHI-ASA65R550E_C5440003.pdf
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