Power field effect transistor ALJ SI2302 featuring DMOS trench technology for high side switching solutions
Key Attributes
Model Number:
SI2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.5A
RDS(on):
115mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF
Input Capacitance(Ciss):
450pF
Pd - Power Dissipation:
900mW
Output Capacitance(Coss):
72pF
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
SI2302
Package:
SOT-23
Product Description
Product Overview
The SI2302 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process is engineered to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is particularly well-suited for low-voltage applications such as power management in notebooks, portable equipment, battery-powered systems, and load switches, where high-side switching and low in-line power loss are critical in a compact surface mount package.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Model Series: SOT-23 Plastic-Encapsulate MOSFETS
- Marking: A2SHB
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| VDS | Drain-source voltage | 20 | V | |||
| ID | Continuous drain current | 2.5 | A | |||
| RDS(ON) | Drain-Source on-state resistance | VGS = 2.5V | 115 | m | ||
| RDS(ON) | Drain-Source on-state resistance | VGS = 4.5V | 85 | m | ||
| Maximum Ratings | ||||||
| VDS | Drain-source voltage | (Ta=25 C unless otherwise noted) | 20 | V | ||
| VGS | Gate-source voltage | 8 | V | |||
| ID | Continuous drain current | 2.5 | A | |||
| IDM | Pulsed Drain Current | 1) | 10 | A | ||
| PD | Power dissipation | 0.9 | W | |||
| TJ | Operating Junction temperature | 150 | C | |||
| Tstg | Storage temperature | -55 | 150 | C | ||
| Thermal Characteristic | ||||||
| RJA | Thermal Resistance from Junction to Ambient | 2) (t 5s) | 139 | C /W | ||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain- source breakdown voltage | VGS = 0V, ID = 250uA | 20 | V | ||
| IDSS | Zero gate voltage drain current | VDS = 20V, VGS = 0V | 1 | A | ||
| IGSS | Gate-body leakage current | VGS = 8V, VDS = 0V | 100 | nA | ||
| VGS(th) | Gate threshold voltage | VGS = VDS, ID = 250uA | 0.5 | 1.2 | V | |
| RDS(on) | Drain-Source on-state resistance | VGS = 4.5V, ID = 2.5A | 85 | m | ||
| RDS(on) | Drain-Source on-state resistance | VGS = 2.5V, ID = 2.0A | 115 | m | ||
| Dynamic Characteristics | ||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = 10V, f = 1MHz | 450 | pF | ||
| Coss | Output capacitance | 72 | pF | |||
| Crss | Reverse transfer capacitance | 22 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-on delay time | VDD = 10V, RL =10 VGEN = 4.5, RG=6 | 9 | ns | ||
| tr | Rise time | 23 | ns | |||
| td(off) | Turn-off delay time | 38 | ns | |||
| tf | Fall time | 9 | ns | |||
| Qg | Total gate charge | VDS = 10V, VGS = 4.5V, ID = 2.5A | nC | |||
| Qgs | Gate-source charge | 2.2 | nC | |||
| Qgd | Gate-drain charge | 3 | nC | |||
| Drain-source body diode characteristics | ||||||
| VSD | Diode forward voltage | VGS = 0 V, IS = 1A | 0.75 | 1.2 | V | |
2410121929_ALJ-SI2302_C22400357.pdf
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