NPN transistor amsem MMBT3904T with UL 94 V 0 flammability rating and RoHS compliant SOT 523 package
Key Attributes
Model Number:
MMBT3904T
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904T
Package:
SOT-523
Product Description
Product Overview
The MMBT3904T is a general-purpose NPN amplifier designed for surface mount applications. It features a complementary PNP type (MMBT3906T) and meets UL 94 V-0 flammability rating. This RoHS compliant and Green EMC device is provided in a SOT-523 package.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: UL 94 V-0 Flammability Rating, Rohs Compliant / Green EMC
- Package: SOT-523
- Complementary Type: MMBT3906T
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| VCBO | Collector-Base Voltage | 60 | V | |||
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current | 200 | mA | |||
| PC | Collector Power Dissipation | (Ta=25) | 150 | mW | ||
| RJA | Thermal Resistance From Junction To Ambient | 833 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| Electrical Characteristics | ||||||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC=1.0mA, IB=0 | 40 | V | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC=10A, IE=0 | 60 | V | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE=10A, IC=0 | 6.0 | V | ||
| ICBO | Collector Cut-off Current | VCB=60V, IE=0 | 100 | nA | ||
| ICEX | Collector Cut-off Current | VCE=30V, VEB(off)=3V | 50 | nA | ||
| IEBO | Emitter Cut-off Current | VEB=5V, Ic=0 | 100 | nA | ||
| hFE | DC Current Gain | IC=0.1mA,VCE=1.0V | 40 | |||
| IC=1.0mA,VCE=1.0V | 70 | |||||
| IC=10mA, VCE=1.0V | 100 | 300 | ||||
| IC=50mA,VCE=1.0V | 60 | |||||
| IC=100mA,VCE=1.0V | 30 | |||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=10mA,IB=1.0mA | 0.2 | V | ||
| IC=50mA,IB=5.0mA | 0.3 | V | ||||
| VBE(sat) | Base-Emitter Saturation Voltage | IC=10mA,IB=1.0mA | 0.65 | 0.85 | V | |
| IC=50mA,IB=5.0mA | 0.95 | V | ||||
| fT | Transition Frequency | IC=10mA, VCE=20V,f=100MHz | 300 | MHZ | ||
| Cob | Output Capacitance | VCB=5.0V, IE=0, f=1.0MHz | 4.0 | pF | ||
| Cib | Input Capacitance | VBE=0.5V, IC=0, f=1.0MHz | 8.0 | pF | ||
| Switching Characteristics | ||||||
| td | Delay Time | VCC=3.0V,VBE(off)=-0.5V IC=10mA,IB1=1.0mA | 35 | nS | ||
| tr | Rise Time | 35 | nS | |||
| ts | Storage Time | VCC=3.0V,IC=10mA IB1=IB2=1.0mA | 200 | nS | ||
| tf | Fall Time | 50 | nS | |||
2410121258_amsem-MMBT3904T_C7529041.pdf
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