NPN General Purpose Amplifier amsem MMBT3904D2 Switching and Amplifier Applications with UL V0 Epoxy
Key Attributes
Model Number:
MMBT3904D2
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
100mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904D2
Package:
DFN1006-3L
Product Description
Product Overview
MMBT3904D2 is an NPN general-purpose amplifier designed for switching and amplifier applications. This rugged and reliable device offers complementary functionality to the MMBT3906D2. Its epoxy meets UL V-0 flammability rating and it is lead-free and RoHS compliant.
Product Attributes
- Brand: Anhui Anmei Semiconductor Co.,Ltd.
- Origin: China
- Certifications: UL V-0 Flammability Rating
- Material: Epoxy
- Finish: Lead Free / ROHS Compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Units |
| VCBO | Collector-Base Voltage | 60 | V | ||
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Continuous Collector Current | 200 | mA | ||
| PD | Power Dissipation | (Ta=25) | 100 | mW | |
| Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55 | +150 | ||
| RJA | Thermal Resistance From Junction To Ambient | 1250 | /W | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC =10uA, IE =0 | 60 | V | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC=1mA, IB =0 | 40 | V | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE =10uA, IC =0 | 6 | V | |
| ICBO | Collector Cut-Off Current | VCB=60V, IE=0 | 0.1 | uA | |
| ICEX | Collector Cut-Off Current | VCE=30V, VBE(OFF)=3V | 50 | nA | |
| IEBO | Emitter Cut-Off Current | VEB=5V,IC=0 | 0.1 | uA | |
| hFE | DC Current Gain | VCE=1V, IC=10mA | 100 | 300 | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=50mA,IB=5mA | 0.3 | V | |
| VBE(sat) | Base-Emitter Saturation Voltage | IC=50mA,IB=5mA | 0.95 | V | |
| fT | Transition Frequency | VCE =20V, IC=10mA,f=100MHz | 300 | MHZ | |
| td | Delay Time | VCC =3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA | 35 | ns | |
| tr | Rise Time | 35 | ns | ||
| ts | Storage Time | VCC =3V, IC=10mA, IB1= IB2= 1mA | 200 | ns | |
| tf | Fall Time | 50 | ns |
2410121308_amsem-MMBT3904D2_C7529039.pdf
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