Depletion mode power mosfet ARK micro DMZ6005E with fast switching speed and esd improved capability
Key Attributes
Model Number:
DMZ6005E
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
700Ω@0V
Gate Threshold Voltage (Vgs(th)):
1.5V@8uA
Reverse Transfer Capacitance (Crss@Vds):
1.8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
12.3pF@5V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
1.55nC
Mfr. Part #:
DMZ6005E
Package:
SOT-23
Product Description
Product Overview
The DMZ6005E is a Depletion-Mode Power MOSFET from ARK Microelectronics, featuring an advanced planar technology and a rugged polysilicon gate cell structure. It offers ESD improved capability, fast switching speed, and is RoHS compliant with a halogen-free option available. This device is designed for applications requiring normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources, particularly in the telecommunications sector.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: P. R. China
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | 600 | V | TA=25unless otherwise specified | ||
| Drain-to-Gate Voltage | VDGX | 600 | V | TA=25unless otherwise specified | ||
| Continuous Drain Current | ID | 0.02 | A | TA=25unless otherwise specified | ||
| Pulsed Drain Current | IDM | 0.08 | A | TA=25unless otherwise specified | ||
| Power Dissipation | PD | 0.50 | W | TA=25unless otherwise specified | ||
| Gate-to-Source Voltage | VGS | 20 | V | TA=25unless otherwise specified | ||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ and TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 250 | K/W | |||
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 600 | V | VGS=-5V, ID=250A | ||
| Drain-to-Source Leakage Current | ID(OFF) | 0.1 | A | VDS=600VVGS= -5V | ||
| Drain-to-Source Leakage Current | ID(OFF) | 10 | A | VDS=600VVGS= -5V TJ=125 | ||
| Gate-to-Source Leakage Current | IGSS | 20 | uA | VGS=+20V, VDS=0V | ||
| Gate-to-Source Leakage Current | IGSS | -20 | V | VGS=-20V, VDS=0V | ||
| ON Characteristics | ||||||
| Saturated Drain-to-Source Current | IDSS | 5 | 25 | mA | VGS=0V, VDS=25V | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 500 | 700 | VGS=0VID=3mA [3] | ||
| Gate-to-Source Cut-off Voltage | VGS(OFF) | -3.3 | -1.5 | V | VDS =3V, ID=8A | |
| Forward Transconductance | gfs | 15.4 | mS | VDS =10V, ID=5mA | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | 12.3 | pF | VGS=-5V VDS=25V f=1.0MHZ | ||
| Oput Capacitance | COSS | 2.6 | ||||
| Reverse Transfer Capacitance | CRSS | 1.8 | ||||
| Total Gate Charge | QG | 1.55 | nC | VGS=-5V~5V VDS=300V, ID=7mA | ||
| Gate-to-Source Charge | QGS | 0.12 | ||||
| Gate-to-Drain (Miller) Charge | QGD | 0.56 | ||||
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | 4 | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20Ohm | ||
| Rise Time | trise | 9 | ||||
| Turn-off Delay Time | td(OFF) | 14 | ||||
| Fall Time | tfall | 84 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | 1.2 | V | ISD =3.0 mA, VGS = -10 V | ||
2410122018_ARK-micro-DMZ6005E_C3031422.pdf
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