loss diode amsem MUR120SA designed for high frequency rectification in switching mode power supplies
Key Attributes
Model Number:
MUR120SA
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
900mV@1A
Current - Rectified:
1A
Mfr. Part #:
MUR120SA
Package:
DO-214AC(SMA)
Product Description
Product Overview
The MUR120SA is an Ultra-Fast Recovery Rectifier Diode (FRED) designed for high-frequency rectification and freewheeling applications. It offers low power loss, ultra-fast recovery time for high efficiency, low leakage current, and high forward surge capability. This product is suitable for use in switching mode converters and inverters for consumer, computer, and telecommunication equipment.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Document Number: 804012
- Revision: 21-Mar-20
- Material: Glass passivated chip junction
- Flammability Rating: UL 94V-0
- Compliance: RoHS-compliant, Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Polarity: Color band denotes cathode end
Technical Specifications
| Parameter | Symbol | Unit | Condition | MUR120SA |
| Repetitive Peak Reverse Voltage | VRRM | V | Ta=25 | 200 |
| Average Forward Current | I F(AV) | A | Ta=25 | 1.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | Half-sine wave, 1 cycle, Ta=25, 60Hz | 8.3 |
| Peak Forward Voltage | VFM | V | IF=1.0A | 0.9 |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta=25 | 5.0 |
| Peak Reverse Current | IRRM2 | A | Ta=125 | 300 |
| Reverse Recovery time | Trr | ns | IF =0.5A, IR =1A, IRR =0.25A | 25 |
| Thermal Resistance(Typical) | RJ-L | /W | Between junction and ambient | 24 |
| Typical junction capacitance | Cj | pF | Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C | 25 |
| Non repetitive reverse avalanche energy | ER | mJ | I(BR)R = 0.7 A, inductive load | 10 |
| Storage Temperature | Tstg | -55 ~ +150 | ||
| Junction Temperature | Tj | -55 ~ +150 |
2410121959_amsem-MUR120SA_C18336924.pdf
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