Dual P Channel MOSFET ARK micro FTF50P35DHVT with 350V Voltage Rating and Advanced Planar Technology
Key Attributes
Model Number:
FTF50P35DHVT
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
500mA
RDS(on):
50Ω@10V,50mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
16W
Gate Charge(Qg):
-
Mfr. Part #:
FTF50P35DHVT
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The FTF50P35DHVT is a Dual P-Channel 350V Enhancement Mode MOSFET from ARK Microelectronics Co., Ltd. It features proprietary advanced planar technology, a rugged polysilicon gate cell structure, and advanced high Vth technology. This product is RoHS compliant and available in a halogen-free option. It is designed for applications requiring high voltage and specific P-Channel MOSFET characteristics.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) | Pulsed Drain Current (IDM) | Power Dissipation (PD) | Gate-to-Source Voltage (VGS) | Static Drain-to-Source On-Resistance (RDS(ON) Max.) | Gate Threshold Voltage (VGS(TH)) |
| FTF50P35DHVT | PDFN3333 | -350 V | -0.5 A | -2.0 A | 16 W | 20 V | 50 | -2 to -5 V |
2410121521_ARK-micro-FTF50P35DHVT_C19184461.pdf
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