Switching diode amsem BAV316 featuring fast recovery time and low forward voltage in compact package
Key Attributes
Model Number:
BAV316
Product Custom Attributes
Reverse Leakage Current (Ir):
5nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
3us
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
130V
Diode Configuration:
Independent
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.1V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV316
Package:
SOD-323GW
Product Description
Product Overview
The BAV316 is a general-purpose switching diode designed for high-speed applications. It features a thin SOD323 SMD package, making it suitable for space-constrained designs. This device is RoHS compliant and Green EMC, indicating its adherence to environmental standards. It is also Moisture Sensitivity Level 1 rated.
Product Attributes
- Brand: An hui Anmei Semiconductor Co.,Ltd.
- Device Marking Code: BAV316 XX
- Certifications: RoHS compliant, Green EMC
- Package: SOD323
Technical Specifications
| Symbol | Parameter | Conditions | Value | Units |
| VF | Forward Voltage | IF = 1mA | 0.85 | V |
| IF = 10mA | 0.95 | V | ||
| IF = 50mA | 1 | V | ||
| IF = 150mA | 1.1 | V | ||
| VBR | Reverse Breakdown Voltage | IR=100A | 130 | V |
| IR | Reverse current | VR= 75V | 5 | nA |
| CJ | Junction Capacitance | VR= 0V, f = 1MHz | 2 | pF |
| trr | Reverse Recovery Time | IF = IR = 10mA, Irr = 0.1*IR, RL = 100 | 3 | s |
| VRRM | Repetitive Peak Reverse Voltage | 130 | V | |
| VR | Maximum DC Blocking Voltage | 130 | V | |
| IF(AV) | Average Forward Current | 215 | mA | |
| IFSM | Peak Forward Surge Current(t=8.3ms) | 2 | A | |
| PD | Power Dissipation | 250 | mW | |
| TJ | Junction Temperature | -55 to +150 | ||
| RJA | Thermal Resistance Junction to Ambient Air | 500 | /W | |
| TSTG | Storage Temperature | -55 to +150 |
2410121532_amsem-BAV316_C7528918.pdf
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