power management solution ASDsemi ASDM40N40E-R 40V N-Channel MOSFET with low on resistance and fast switching
Key Attributes
Model Number:
ASDM40N40E-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
141pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
1.733nF
Pd - Power Dissipation:
65W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
ASDM40N40E-R
Package:
DFN3.3x3.3-8
Product Description
Product Overview
The ASDM40N40E is a 40V N-Channel MOSFET from Ascend Semiconductor Co., Ltd., designed for efficient power management applications. It features low on-resistance, fast switching speeds, and excellent package thermal dissipation, making it suitable for DC/DC converters and onboard power for servers, particularly in synchronous rectification applications. This MOSFET is 100% avalanche tested for reliability.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Line: ASDM
- Technology: N-Channel MOSFET
- Package Type: DFN3.3x3.3-8
- Date of Release: December 2018
Technical Specifications
| Model | Parameter | Min. | Typ. | Max. | Units | Test Condition |
|---|---|---|---|---|---|---|
| ASDM40N40E | Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | ||||
| Continuous Drain Current (ID) | 40 | A | TC = 25 | |||
| Continuous Drain Current (ID) | 32 | A | TC = 100 | |||
| Pulsed Drain Current (IDM) | 160 | A | note1 | |||
| Single Pulsed Avalanche Energy (EAS) | 50 | mJ | ||||
| Power Dissipation (PD) | 65 | W | TC = 25 | |||
| Thermal Resistance, Junction to Case (RJC) | 1.92 | /W | ||||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, IDS=250A | |||
| Gate Threshold Voltage (VGS(th)) | 1.1 | 2.4 | V | VDS=VGS, IDS=250A | ||
| Gate Leakage Current (IGSS) | 100 | nA | VGS=20V, VDS=0V | |||
| Zero Gate Voltage Drain Current (IDSS) | 1.6 | A | VDS=40V, VGS=0V, TJ =125C | |||
| Drain-Source On-state Resistance (RDS(ON)) | 6.0 | 7.5 | 8.5 | m | VGS=10V, IDS=30A | |
| Diode Characteristics | Diode Forward Voltage (VSD) | 1.2 | V | ISD=20A, VGS=0V | ||
| Reverse Recovery Time (trr) | 14 | ns | ISD=20A, dlSD/dt=100A/s | |||
| Reverse Recovery Charge (Qrr) | 32 | nC | ISD=20A, VGS=0V | |||
| Gate Resistance (RG) | 1.2 | |||||
| Capacitance | Input Capacitance (Ciss) | 1733 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | ||
| Output Capacitance (Coss) | 283 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | |||
| Reverse Transfer Capacitance (Crss) | 141 | pF | VGS=0V, VDS=20V, Frequency=1.0MHz | |||
| Switching Characteristics | Turn-on Delay Time (td(ON)) | 6 | ns | VDD=20V,IDS=20A, VGEN=10V,RG=4.7 | ||
| Turn-on Rise Time (tr) | 10 | ns | VDD=20V,IDS=20A, VGEN=10V,RG=4.7 | |||
| Turn-off Delay Time (td(OFF)) | 24 | ns | VDD=20V,IDS=20A, VGEN=10V,RG=4.7 | |||
| Turn-off Fall Time (tf) | 5 | ns | VDD=20V,IDS=20A, VGEN=10V,RG=4.7 | |||
| Gate Charge Characteristics | Total Gate Charge (Qg) | 18 | 23 | nC | VDS=32V, VGS=10V, IDS=20A | |
| Gate-Source Charge (Qgs) | 2.5 | nC | VDS=32V, VGS=10V, IDS=20A | |||
| Gate-Drain Charge (Qgd) | 1.6 | nC | VDS=32V, VGS=10V, IDS=20A |
| Package | Marking | Device No. | Packing Quantity |
|---|---|---|---|
| DFN3.3x3.3-8 | 40N40 | ASDM40N40E-R | 5000/Reel |
2410121714_ASDsemi-ASDM40N40E-R_C2972887.pdf
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