Power Switching N Channel Silicon MOSFET ANHI AUR020N085 with Enhanced Body Diode dvdt Capability
Key Attributes
Model Number:
AUR020N085
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
247A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Number:
1 N-channel
Output Capacitance(Coss):
3.5nF
Input Capacitance(Ciss):
11nF
Pd - Power Dissipation:
275W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
AUR020N085
Package:
TOLL
Product Description
Product Overview
The AUP026N085, AUB026N085, and AUR020N085 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters within the telecommunications and industrial sectors. Key features include low drain-source on-resistance (RDS(on)), enhanced body diode dv/dt capability, and improved avalanche ruggedness, ensuring reliable performance in demanding environments.
Product Attributes
- Product Type: N-Channel Silicon MOS Field-Effect Transistor (MOSFET)
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
Key Performance Parameters:
| Parameter | Value | Unit | Notes / Test Condition |
|---|---|---|---|
| Drain-Source Voltage (VDS) @ Tj,max | 85 | V | |
| RDS(on),max (TO220 & TO263) | 2.6 | m | |
| RDS(on),max (TOLL 8L) | 2.0 | m | |
| Gate Charge (Qg), typ | 152 | nC | |
| Pulsed Drain Current (ID,pulse) | 998 | A |
Models and Packaging:
| Part Name | Package | Marking |
|---|---|---|
| AUP026N085 | TO220 | AUP026N085 |
| AUB026N085 | TO263 | AUB026N085 |
| AUR020N085 | TOLL | AUR020N085 |
Maximum Ratings:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous drain current at silicon | ID | - | 247 | - | A | TC=25C, Limited by Tj,max, D=0.50 |
| Continuous drain current at package | ID | - | 195 | - | A | TC=25C, Limited by Tj,max, D=0.50 |
| Continuous drain current at silicon | ID | - | 156 | - | A | TC=100C, Limited by Tj,max, D=0.50 |
| Pulsed drain current | ID,pulse | - | - | 998 | A | TC=25C, tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - | - | 970 | mJ | Tc=25,VDD=50V,Vgs=10V, L=0.5mH, RG=25 |
| Avalanche current, single pulse | IAR | - | - | 62 | A | Tc=25, VDD=50V, L=0.5mH, RG=25 |
| Gate source voltage (static) | VGS | -20 | - | 20 | V | static |
| Power dissipation | Ptot | - | - | 275 | W | TC=25C |
| Storage temperature | Tstg | -55 | - | 150 | C | |
| Operating junction temperature | Tj | -55 | - | 150 | C | |
| Soldering Temperature | TL | - | - | 300 | C | Distance of 1.6mm from case for 10s |
Thermal Characteristics:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Thermal resistance, junction - case (TO220/TO263) | RthJC | - | 0.46 | - | C/W | |
| Thermal resistance, junction - ambient (TO220/TO263) | RthJA | - | 63 | - | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TOLL) | RthJC | - | 0.28 | - | C/W | |
| Thermal resistance, junction - ambient (TOLL) | RthJA | - | 48 | - | C/W | device on PCB, minimal footprint |
Electrical Characteristics (at Tj=25C, unless otherwise specified):
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | - | - | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 2.5 | 4.5 | - | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=85V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - | - | +/-100 | nA | VGS=+/-20V, VDS=0V |
| Drain-source on-state resistance (TO220 & TO263) | RDS(on) | - | 2.1 | 2.6 | m | VGS=10V, ID=20A, Tj=25C |
| Drain-source on-state resistance (TOLL) | RDS(on) | - | 1.8 | 2.0 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | - | 2.1 | - | f=1MHz, open drain |
Dynamic Characteristics:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | - | 11000 | - | PF | VGS=0V, VDS=25V, f=1MHz |
| Output capacitance | Coss | - | 3500 | - | PF | VGS=0V, VDS=25V, f=1MHz |
| Reverse transfer capacitance | Crss | - | 350 | - | PF | VGS=0V, VDS=25V, f=1MHz |
| Turn-on delay time | td(on) | - | 33 | - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Rise time | tr | - | 47 | - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Turn-off delay time | td(off) | - | 89 | - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
| Fall time | tf | - | 46 | - | ns | VDD=42V,VGS=10V,ID=80A, RG=2.5 |
Gate Charge Characteristics:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Gate to source charge | Qgs | - | 46 | - | nC | VDD=42V, ID=80A, VGS=10V |
| Gate to drain charge | Qgd | - | 46 | - | nC | VDD=42V, ID=80A, VGS=10V |
| Gate charge total | Qg | - | 152 | - | nC | VDD=42V, ID=80A, VGS=10V |
Reverse Diode Characteristics:
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Note / Test Condition |
|---|---|---|---|---|---|---|
| Continuous Source Current at silicon | ISD | - | 229 | - | A | |
| Diode forward voltage | VSD | - | 0.8 | 1.2 | V | VGS=0V, Is=1A, Tj=25C |
| Reverse recovery time | trr | - | 103 | - | ns | Vgs=0V, IF=80A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | - | 118 | - | nC | Vgs=0V, IF=80A, diF/dt=100A/s |
Package Outlines:
- PG-TO263(LM)
- PG-TO220(LM)
- PG-TOLL(JJW)
2410121512_ANHI-AUR020N085_C18723003.pdf
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