Surface Mount MOSFET 40V N Channel and P Channel ASDsemi ASDM4614S R for Load Switching Applications
Key Attributes
Model Number:
ASDM4614S-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
980pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
ASDM4614S-R
Package:
SOP-8
Product Description
Product Overview
The ASDM4614S is a 40V N-Channel and P-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications, including PWM applications, load switching, and power management. This MOSFET offers robust performance with features like high current handling and efficient switching characteristics.
Product Attributes
- Brand: Ascend Semiconductor
- Package: SOP-8
- Lead Free: Yes
- Version: 1.0
- Date: NOV 2019
Technical Specifications
| Parameter | Symbol | Condition | N-Channel Typ | P-Channel Typ | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | |||||
| Drain-Source Voltage | VDS | 40 | -40 | V | |
| Gate-Source Voltage | VGS | 20 | 20 | V | |
| Continuous Drain Current | ID | 7 | -6 | A | |
| Pulsed Drain Current (Note 1) | IDM | 20 | -20 | A | |
| Maximum Power Dissipation | PD | 2 | 2 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | -55 To 150 | ||
| N-Channel Electrical Characteristics (TA=25 unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=32V,VGS=0V | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 To 2.5 | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A | 28 To 35 | - | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=4A | 36 To 45 | - | m |
| Forward Transconductance | gFS | VDS=5V,ID=5A | 15 | - | S |
| Input Capacitance | Clss | 620 | - | PF | |
| Output Capacitance | Coss | 110 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | 70 | - | PF |
| Turn-on Delay Time | td(on) | 4.5 | - | nS | |
| Turn-on Rise Time | tr | 2.5 | - | nS | |
| Turn-Off Delay Time | td(off) | 14.5 | - | nS | |
| Turn-Off Fall Time | tf | VDD=15V, RL=3, VGS=10V,RGEN=3 | 3.5 | - | nS |
| Total Gate Charge | Qg | 5.2 | - | nC | |
| Gate-Source Charge | Qgs | 0.85 | - | nC | |
| Gate-Drain Charge | Qg | VDS=15V,ID=5A, VGS=10V | 1.3 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=3A | - | 1.3 | V |
| Diode Forward Current | IS | (Note 2) | - | 4 | A |
| P-Channel Electrical Characteristics (TA=25 unless otherwise noted) | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | - | -40 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-32V , VGS=0V | - | -1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | - | -1 To -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-6A | - | 38 To 46 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | - | 70 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | - | 10 | S |
| Input Capacitance | Clss | - | 980 | PF | |
| Output Capacitance | Coss | - | 120 | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | - | 95 | PF |
| Turn-on Delay Time | td(on) | - | 9 | nS | |
| Turn-on Rise Time | tr | - | 5 | nS | |
| Turn-Off Delay Time | td(off) | - | 28 | nS | |
| Turn-Off Fall Time | tf | VDD=-15V,RL=3.6, VGS=-10V,RGEN=3 | - | 13.5 | nS |
| Total Gate Charge | Qg | - | 14 | nC | |
| Gate-Source Charge | Qgs | - | 3.1 | nC | |
| Gate-Drain Charge | Qg | VDS=-15V,ID=-4A,VGS=-10V | - | 3 | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A | - | -1.3 | V |
Ordering and Marking Information
| Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|
| ASDM4614S-R | 4614 Lot Number | SOP-8 | Tape&Reel | 4000/Reel |
2410121912_ASDsemi-ASDM4614S-R_C2758242.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
