Low On Resistance High Current Silicon N Channel MOSFET ANHI AUN084N10 for Battery Powered Systems
Key Attributes
Model Number:
AUN084N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
68A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.4mΩ
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
30pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.93nF@50V
Pd - Power Dissipation:
66W
Gate Charge(Qg):
41.7nC
Mfr. Part #:
AUN084N10
Package:
DFN-8(5x6)
Product Description
Product Overview
The AUN084N10 is a high-performance Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for applications requiring low on-resistance and high-speed power switching. Its key features include a low drain-source on-resistance of 0.005 (typ.) and a continuous drain current of 68A. This MOSFET is ideal for portable equipment and battery-powered systems.
Product Attributes
- Brand: AUN
- Model: AUN084N10
- Type: Silicon N-Channel MOS
- Packaging: DFN5x6
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 1 - 3 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.007 - 0.0084 | VGS=10V, ID=20A, Tj=25C | |
| 0.010 - 0.013 | VGS=4.5V, ID=10A, Tj=25C | |||
| Gate resistance (Intrinsic) | RG | - 2 - | f=1MHz, open drain | |
| Continuous drain current | ID | - 68 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 106 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 7.2 | mJ | Tc=25, VDD=50V, L=10mH, RG=25 |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation | Ptot | - 66 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | - 150 | C | |
| Thermal resistance, junction - case | RthJC | - 1.9 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - 50 | C/W | device on PCB, minimal footprint |
| Input capacitance | Ciss | - 1930 | pF | Vds=50V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | - 387 | pF | Vds=50V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | - 30 | pF | Vds=50V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | - 10 | ns | VDD=50V,VGS=10V,RG=3, ID=1A |
| Rise time | tr | - 20 | ns | VDD=50V,VGS=10V,RG=3, ID=1A |
| Turn-off delay time | td(off) | - 30 | ns | VDD=50V,VGS=10V,RG=3, ID=1A |
| Fall time | tf | - 14 | ns | VDD=50V,VGS=10V,RG=3, ID=1A |
| Gate to source charge | Qgs | - 5.5 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qg d | - 12.3 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | - 41.7 | nC | VDS=50V,VGS=0 to 10V, ID=20A |
| Diode forward voltage | VSD | - 0.8 | V | VGS=0V, IF=20A, Tj=25C |
| Reverse recovery time | trr | - 48 | ns | VR=50V,IF=20A, diF/dt=100A/us |
| Reverse recovery charge | Qrr | - 78.3 | uC | VR=50V,IF=20A, diF/dt=100A/us |
2410121609_ANHI-AUN084N10_C5440026.pdf
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