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quality Low RDS ON N Channel MOSFET ASR65R120EFD Suitable for Half Bridge and Series Resonance Circuits factory
quality Low RDS ON N Channel MOSFET ASR65R120EFD Suitable for Half Bridge and Series Resonance Circuits factory

Low RDS ON N Channel MOSFET ASR65R120EFD Suitable for Half Bridge and Series Resonance Circuits

Key Attributes
Model Number: ASR65R120EFD
Product Custom Attributes
Drain To Source Voltage:
655V
Current - Continuous Drain(Id):
30A
RDS(on):
120mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Output Capacitance(Coss):
89pF
Input Capacitance(Ciss):
2.657nF
Gate Charge(Qg):
55.4nC@10V
Mfr. Part #:
ASR65R120EFD
Package:
TOLL-8L
Product Description

Product Overview

This series of N-Channel enhancement mode MOSFETs, including models ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, and ASB65R120EFD, offers a low drain-source on-resistance (RDS(ON) = 0.105 typ.) and easy gate control. Designed for high-efficiency power conversion, these MOSFETs are suitable for applications such as Boost PFC switches, Half bridge, Asymmetric half bridge, Series resonance half bridge, and Full bridge topologies. Key application areas include Server power, Telecom power, EV charging, Solar inverters, and UPS systems.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon
  • Type: N-Channel MOS
  • Mode: Enhancement mode

Technical Specifications

Part Name Package Marking VDS @ Tj,max (V) RDS(on),max (m) Qg,typ (nC) ID,pulse (A) Body diode dv/dt (V/ns)
ASW65R120EFD TO247 ASW65R120EFD 700 120 55.4 90 50
ASA65R120EFD TO220F ASA65R120EFD 700 120 55.4 90 50
ASR65R120EFD TOLL-8L ASR65R120EFD 700 120 55.4 90 50
ASB65R120EFD TO263 ASB65R120EFD 700 120 55.4 90 50
Parameter Symbol Values Unit Note / Test Condition
Continuous drain current ID - 30 A TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50
Pulsed drain current ID,pulse - 90 A TC=25C, Pulse width tp limited by Tj,max
Avalanche energy, single pulse EAS - 1216 mJ Tc=25,VDD=50V, L=10mH, RG=25
Avalanche current, single pulse IAR - 10.9 A Tc=25,VDD=50V,L=10mH, RG=25
MOSFET dv/dt ruggedness dv/dt - 36.2 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 to 20 V static
Gate source voltage (dynamic) VGS -30 to 30 V AC (f>1 Hz)
Power dissipation (TO247) Ptot - 277.8 W TC=25C
Power dissipation (TO220F) Ptot - 36.5 W TC=25C
Storage temperature Tstg -55 to 150 C
Operating junction temperature Tj -55 to 150 C
Soldering Temperature TL 260 C Distance of 1.6mm from case for 10s
Reverse diode dv/dt dv/dt - 50 V/ns VDS=400V, ISD<= ID, Tj=25C
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA
Gate threshold voltage V(GS)th 3 to 5 V VDS=VGS, ID=250uA
Zero gate voltage drain current IDSS - 2 uA VDS=650V, VGS=0V, Tj=25C
Gate-source leakage current IGSS +/-100 nA VGS=+/-30V, VDS=0V
Drain-source on-state resistance RDS(on) 0.105 to 0.120 VGS=10V, ID=14A, Tj=25C
Gate resistance (Intrinsic) RG 12.6 f=1MHz, open drain
Transconductance Gfs 29.2 S VDS=20V, ID=15A
Input capacitance Ciss 2657 pF VGS=0V, VDS=100V, f=1MHz
Output capacitance Coss 89 pF VGS=0V, VDS=100V, f=1MHz
Reverse transfer capacitance Crss 2 pF VGS=0V, VDS=100V, f=1MHz
Turn-on delay time td(on) 29.6 ns VDD=400V,VGS=10V,ID=19A, RG=2
Rise time tr 31.3 ns VDD=400V,VGS=10V,ID=19A, RG=2
Turn-off delay time td(off) 94.6 ns VDD=400V,VGS=10V,ID=19A, RG=2
Fall time tf 9.1 ns VDD=400V,VGS=10V,ID=19A, RG=2
Gate to source charge Qgs 15 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate to drain charge Qgd 20.2 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate charge total Qg 55.4 nC VDD=400V, ID=19A, VGS=0 to 10V
Gate plateau voltage Vplateau 5.9 V VDD=400V, ID=19A, VGS=0 to 10V
Diode forward voltage VSD 0.67 V VGS=0V, IF=1A, Tj=25C
Reverse recovery time trr 136.7 ns VR=400V, IF=17A,diF/dt=100A/s
Reverse recovery charge Qrr 0.741 uC VR=400V, IF=17A,diF/dt=100A/s
Peak reverse recovery current Irrm 10.28 A VR=400V, IF=17A,diF/dt=100A/s
Thermal resistance, junction - case (TO220F) RthJC 3.4 C/W
Thermal resistance, junction - ambient (TO220F) RthJA 62 C/W device on PCB, minimal footprint
Thermal resistance, junction - case (TO247,TOLL,TO263) RthJC 0.45 C/W
Thermal resistance, junction - ambient (TO247,TOLL,TO263) RthJA 57 C/W device on PCB, minimal footprint

2410121535_ANHI-ASR65R120EFD_C22470091.pdf

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