General purpose switching diode amsem BAV99 with fast switching speed and low leakage current design

Key Attributes
Model Number: BAV99
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
6ns
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
70V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
BAV99
Package:
SOT-23
Product Description

Product Overview

The BAV99 is a high-performance switching diode designed for general-purpose switching applications. It features fast switching speed, high conductance, and low current leakage, all within a small outline surface mount package. This device is RoHS compliant and available as a Green EMC device.

Product Attributes

  • Brand: Anhui Anmei Semiconductor Co., Ltd.
  • Origin: China
  • Certifications: RoHS compliant / Green EMC Device
  • Package: Small Outline Surface Mount Package (SOT23)

Technical Specifications

DeviceParameterValueUnitsTest Conditions
BAV99Reverse Voltage (VR)70V
Forward Current (IF)200mA
Thermal Resistance Junction to Ambient (RJA)556/W
Non-Repetitive Peak Forward Surge Current (IFSM)2.0A*1 8.3 ms single half sine-wave
Power Dissipation (PD)225mW
Junction Temperature (TJ)150
Storage Temperature (TSTG)-55 to 150
Reverse breakdown voltage75VIR=100uA
BAV99Forward Voltage (VF)0.715VIF=1mA
Forward Voltage (VF)0.855VIF=10mA
Forward Voltage (VF)1VIF=50mA
Forward Voltage (VF)1.25VIF=150mA
Reverse voltage leakage current (IR)2.5uAVR=70V
BAV99Capacitance between terminals (CT)2pFVR=0V, f=1MHz
Reverse recovery time (Trr)6nSIF= IR=10mA Irr=0.1IR , RL=100

Ordering Information

DevicePackageShippingTape wideEmboss pitchNotes
BAV99SOT23Tape & Reel3000pcs /7 Reel8mm4mm

2410121245_amsem-BAV99_C7528921.pdf

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