Power Switching Silicon N Channel MOSFET ASB65R220E for Single Ended Flyback and Forward Topologies
Key Attributes
Model Number:
ASB65R220E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
220mΩ@10V,7A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.28pF
Output Capacitance(Coss):
134pF
Input Capacitance(Ciss):
1.547nF
Pd - Power Dissipation:
126W
Gate Charge(Qg):
32.23nC@10V
Mfr. Part #:
ASB65R220E
Package:
TO-263
Product Description
Product Overview
The ASA65R220E and ASB65R220E are N-channel Silicon MOSFETs designed for high-efficiency power applications. They feature low drain-source on-resistance (RDS(ON) = 0.19 typ.) and easy gate switching control in an enhancement mode. These MOSFETs are ideal for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. They are suitable for applications such as PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Part Name | Package | Marking | VDS @Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|
| ASA65R220E | TO220F | ASA65R220E | 700 | 220 | 32.23 | 60 |
| ASB65R220E | TO263 | ASB65R220E | 700 | 220 | 32.23 | 60 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS=0V,ID=250uA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS,ID=250uA |
| Zero gate voltage drain current | IDSS | - 1 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V,VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.19 - 0.22 | VGS=10V,ID=7A,Tj=25C | |
| Gate resistance | RG | - 11 | f=1MHz, open drain | |
| Input capacitance | Ciss | - 1547 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | - 134 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | - 5.28 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | - 12.4 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Risetime | tr | - 21.6 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Turn-off delay time | td(off) | - 52 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Fall time | tf | - 18.8 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Gate to source charge | Qgs | - 8.242 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate to drain charge | Qgd | 10.85 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate charge total | Qg | - 32.23 | nC | VDD=400V,ID=8A,VGS=0to 10V |
| Gate plateau voltage | Vplateau | - 5.7 | V | VDD=400V,ID=8A,VGS=0to 10V |
| Diode forward voltage | VSD | - 0.72 | V | VGS=0V,IF=1A,Tj=25C |
| Reverse recovery time | trr | - 275 | ns | VR=400V,IF=8A,diF/dt=100A/s |
| Reverse recovery charge | Qrr | - 3.809 | C | VR=400V,IF=8A,diF/dt=100A/s |
| Peak reverse recovery current | Irrm | - 25.6 | A | VR=400V,IF=8A,diF/dt=100A/s |
| Power dissipation (TO220F) | Ptot | - 33 | W | TC=25C |
| Power dissipation (TO263) | Ptot | - 126 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Thermal resistance, junction - case (TO220F) | RthJC | - 3.8 | C/W | - |
| Thermal resistance, junction - ambient (TO220F) | RthJA | - 80 | C/W | device on PCB, minimal footprint |
| Thermal resistance, junction - case (TO263) | RthJC | - 0.99 | C/W | - |
| Thermal resistance, junction - ambient (TO263) | RthJA | - 62 | C/W | device on PCB, minimal footprint |
2410121521_ANHI-ASB65R220E_C18199767.pdf
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