High Speed Switching N Channel MOSFET Model AUB033N08BG Suitable for Telecom and Industrial Circuits
Key Attributes
Model Number:
AUB033N08BG
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.3mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
43.4pF
Pd - Power Dissipation:
179W
Input Capacitance(Ciss):
7.463nF
Gate Charge(Qg):
109nC
Mfr. Part #:
AUB033N08BG
Package:
TO-263
Product Description
Product Overview
The AUB033N08BG series are N-Channel MOSFETs designed for high-speed switching applications. These devices feature low drain-source on-resistance, high switching speed, enhanced body diode, and rugged avalanche ruggedness. They are ideal for synchronous rectification in DC/DC converters, hard switching and high-speed circuits, and applications in telecom and industrial sectors. Available in TO-263, TO-220, and TO-247 packages.
Product Attributes
- Brand: AUB
- Channel Type: N-Channel
- Technology: MOSFET
- Packaging Options: TO-263, TO-220, TO-247
Technical Specifications
| Model | Part Name | Package | Marking | VDS @ Tj,max (V) | RDS(on),max (m) | Qg,typ (nC) | ID,pulse (A) |
|---|---|---|---|---|---|---|---|
| AUB033N08BG | AUB033N08 | TO263 | AUB033N08BG | 85 | 3.3 | 109 | 640 |
| AUP033N08BG | AUP033N08 | TO220 | AUP033N08BG | 85 | 3.3 | 109 | 640 |
| AUW033N08BG | AUW033N08 | TO247 | AUW033N08BG | 85 | 3.3 | 109 | 640 |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 85 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.5 - 3.5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 1000 | nA | VDS=80V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=20V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 2.9 - 3.3 | m | VGS=10V, ID=20A, Tj=25C |
| Gate resistance (Intrinsic) | RG | 0.7 | f=1MHz, open drain | |
| Input capacitance | Ciss | 7463 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Output capacitance | Coss | 1292 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 43.4 | pF | Vds=40V,Vgs=0V, f=1MHz |
| Turn-on delay time | td(on) | 24 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Rise time | tr | 53 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Turn-off delay time | td(off) | 107 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Fall time | tf | 66 | ns | VDD=40V,VGS=10V,RG=10, ID=20A |
| Gate to source charge | Qgs | 27.5 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate to drain charge | Qgd | 26.4 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Gate charge total | Qg | 109 | nC | VDS=40V,VGS=0 to 10V, ID=20A |
| Diode forward voltage | VSD | 0.67 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 52 | ns | VR=40V,IF=20A, diF/dt=200A/us |
| Reverse recovery charge | Qrr | 137 | uC | VR=40V,IF=20A,diF/dt=200A/us |
| Peak reverse recovery current | Irrm | -3.7 | A | VR=40V,IF=20A,diF/dt=200A/us |
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Continuous drain current | ID | 160 (TC=25C), 115 (TC=100C) | A | Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 640 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 884 | mJ | |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Power dissipation (TO220) | Ptot | 370 | W | TC=25C |
| Power dissipation (TO263) | Ptot | 179 | W | TC=25C |
| Power dissipation (TO247) | Ptot | 340 | W | TC=25C |
| Storage temperature | Tstg | -55 - 175 | C | |
| Operating junction temperature | Tj | -55 - 175 | C |
| Package | Parameter | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| TO220 | Thermal resistance, junction - case | 0.42 | C/W | |
| Thermal resistance, junction - ambient | 62 | C/W | device on PCB, minimal footprint | |
| TO263 | Thermal resistance, junction - case | 0.7 | C/W | |
| Thermal resistance, junction - ambient | 62 | C/W | device on PCB, minimal footprint | |
| TO247 | Thermal resistance, junction - case | 0.44 | C/W | |
| Thermal resistance, junction - ambient | 40 | C/W | device on PCB, minimal footprint |
2410121538_ANHI-AUB033N08BG_C5440029.pdf
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