Soft Switching Silicon N Channel MOSFET ANHI ASW65R072EFDA Suitable for Series Resonance Half Bridge
Key Attributes
Model Number:
ASW65R072EFDA
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
54A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
3.08pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
172W
Input Capacitance(Ciss):
4.528nF@50V
Gate Charge(Qg):
93.78nC
Mfr. Part #:
ASW65R072EFDA
Package:
TO-247
Product Description
Product Overview
The ASW65R072EFDA is a Silicon N-Channel MOSFET designed for soft switching applications. Its key features include a low drain-source on-resistance of 0.060 (typ.) and easy gate switching control with an enhancement mode. This MOSFET is suitable for boost PFC switches, half-bridge, asymmetric half-bridge, series resonance half-bridge, and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. It finds applications in server power, telecom power, EV charging, and solar inverters.
Product Attributes
- Brand: ASW
- Part Name: ASW65R072EFDA
- Package: TO247
- Technology: Silicon N-Channel MOS
- Mode: Enhancement mode
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=250uA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 2 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.060 - 0.072 | VGS=10V, ID=14A, Tj=25C | |
| Gate resistance | RG | 1 | f=1MHz, open drain | |
| Input capacitance | Ciss | 4528 | pF | VGS=0V, VDS=50V, f=1MHz |
| Output capacitance | Coss | 414.3 | pF | VGS=0V, VDS=50V, f=1MHz |
| Reverse transfer capacitance | Crss | 3.08 | pF | VGS=0V, VDS=50V, f=1MHz |
| Turn-on delay time | td(on) | 21.6 | ns | VDD=400V,VGS=13V,ID=17.1A, RG=5.3;see table 9 |
| Rise time | tr | 10.7 | ns | VDD=400V,VGS=13V,ID=17.1A, RG=5.3;see table 9 |
| Turn-off delay time | td(off) | 86.6 | ns | VDD=400V,VGS=13V,ID=17.1A, RG=5.3;see table 9 |
| Fall time | tf | 8.6 | ns | VDD=400V,VGS=13V,ID=17.1A, RG=5.3;see table 9 |
| Gate to source charge | Qgs | 24.79 | nC | VDD=400V, ID=17.1A, VGS=0 to 10V |
| Gate to drain charge | Qg | 34.94 | nC | VDD=400V, ID=17.1A, VGS=0 to 10V |
| Gate charge total | Qg | 93.87 | nC | VDD=400V, ID=17.1A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 6.01 | V | VDD=400V, ID=17.1A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.64 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 224.4 | ns | VR=400V, IF=33A, diF/dt=60A/s; see table 8 |
| Reverse recovery charge | Qrr | 1.09 | uC | VR=400V, IF=33A, diF/dt=60A/s; see table 8 |
| Peak reverse recovery current | Irrm | 8.89 | A | VR=400V, IF=33A, diF/dt=60A/s; see table 8 |
| Thermal resistance, junction - case | RthJC | 0.73 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
| Continuous drain current | ID | 54 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 162 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 793 | mJ | Tc=25, VDD=50V, L=10mH, RG=25 |
| MOSFET dv/dt ruggedness | dv/dt | 36 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 172 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Reverse diode dv/dt | dv/dt | 50 | V/s | VR=400V, IF=25 A, diF/dt=100A/s; see table 8 |
2410121610_ANHI-ASW65R072EFDA_C7494993.pdf
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