Silicon N Channel MOSFET ANHI ASA60R210E suitable for LCD PDP TVs and LED lighting power supplies
Key Attributes
Model Number:
ASA60R210E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
RDS(on):
210mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
5.28pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.547nF@50V
Pd - Power Dissipation:
33W
Gate Charge(Qg):
32.23nC
Mfr. Part #:
ASA60R210E
Package:
TO-220F
Product Description
Product Overview
The ASA60R210E is a Silicon N-Channel MOS MOSFET designed for high-efficiency power switching applications. It features a low drain-source on-resistance of 0.18 (typ.) and is easy to control due to its enhancement mode operation. This MOSFET is suitable for various power supply topologies including Boost PFC, single-ended flyback, two-transistor forward, half bridge, asymmetric half bridge, and series resonance half bridge. Its applications span across PC power supplies, adaptors, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 605 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 2.8 - 4.2 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 100 | nA | VDS=600V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.18 - 0.21 | VGS=10V, ID=7.5A, Tj=25C | |
| Gate resistance (Intrinsic) | RG | 5.6 | f=1MHz, open drain | |
| Input capacitance | Ciss | 1547 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 134 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 5.28 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 12.4 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Rise time | tr | 21.6 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Turn-off delay time | td(off) | 52 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Fall time | tf | 18.8 | ns | VDD=400V,VGS=13V,ID=8A, RG=3.4 |
| Gate to source charge | Qgs | 8.242 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 10.85 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate charge total | Qg | 32.23 | nC | VDD=400V, ID=8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 5.7 | V | VDD=400V, ID=8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.72 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 275 | ns | VR=400V, IF=8 A, diF/dt=100A/s |
| Reverse recovery charge | Qrr | 3.809 | uC | VR=400V, IF=8 A, diF/dt=100A/s |
| Peak reverse recovery current | Irrm | 25.6 | A | VR=400V, IF=8 A, diF/dt=100A/s |
| Continuous drain current | ID | - 20 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | - 60 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | - 898 | mJ | |
| MOSFET dv/dt ruggedness | dv/dt | - 135 | V/ns | VDS=0...400V |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | - 33 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | |
| Operating junction temperature | Tj | -55 - 150 | C | |
| Reverse diode dv/dt | dv/dt | - 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Thermal resistance, junction - case | RthJC | - 3.8 | C/W | |
| Thermal resistance, junction - ambient | RthJA | - 80 | C/W | device on PCB, minimal footprint |
2410121609_ANHI-ASA60R210E_C5440035.pdf
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