silicon carbide schottky diode with low forward voltage Bestirpower BCA65S50D4 650 volt 50 amp rating

Key Attributes
Model Number: BCA65S50D4
Product Custom Attributes
Reverse Leakage Current (Ir):
10nA@650V
Voltage - Forward(Vf@If):
1.6V@50A
Current - Rectified:
50A
Mfr. Part #:
BCA65S50D4
Package:
TO-247-2
Product Description

Product Overview

The BCA65S50D4 is a 650V, 50A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC technology for excellent low forward voltage and robustness. This diode is designed for applications demanding high power efficiency, featuring negligible reverse recovery, high-speed switching, and temperature-independent switching. It is suitable for high-frequency operations, reducing heat dissipation requirements, and enabling smaller, more cost-effective system designs. Key applications include switch-mode power supplies, solar inverters, data centers, and uninterruptible power supplies.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Schottky Diode
  • Compliance: RoHS compliant

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
VRRM Repetitive Peak Reverse Voltage 650 V
IF Forward Current TC = 25 97 A
IF Forward Current TC = 135 50 A
IF,SM Non-Repetitive Forward Surge Current TC = 25, tp = 10 ms 291 A
IF,SM Non-Repetitive Forward Surge Current TC = 110, tp = 10 ms 192 A
IF,RM Repetitive Peak Forward Surge Current TC = 25, tp = 10 ms 262 A
I2dt I2t value TC = 25, tp = 10 ms 423 A2s
I2dt I2t value TC = 110, tp = 10 ms 184 A2s
Ptot Power Dissipation TC = 25 410 W
Ptot Power Dissipation TC = 110 178 W
Ptot Power Dissipation TC = 150 68 W
TJ,TSTG Operating Junction and Storage Temperature -55 175
RJC Thermal Resistance, Junction to Case Typ. 0.366 /W
VDC DC blocking voltage 650 V
VF Forward Voltage IF=20A, TJ=25 1.60 1.8 V
VF Forward Voltage IF=20A, TJ=175 2.2 V
IR Reverse Current VR = 650 V, TJ= 25 0.01 5 A
IR Reverse Current VR = 650 V, TJ= 175 1 A
QC Total Capacitive Charge VR = 400 V, TJ = 25 115 nC
C Total Capacitance VR = 0 V, f = 1MHz 2247 pF
C Total Capacitance VR = 200 V, f = 1MHz 217 pF
C Total Capacitance VR = 400 V, f = 1MHz 204 pF
EC Capacitance Stored Energy VR = 400 V, TC = 25 28 J

Package Information

Part Number Top Marking Package Packing Method Quantity
BCA65S50D4 BCA65S50D4 TO247-2 Tube 30 units

2512111635_Bestirpower-BCA65S50D4_C53152692.pdf

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