Low Resistance Silicon N Channel MOSFET ANHI ASW65R095EFD Suitable for Boost PFC and Power Supplies
Key Attributes
Model Number:
ASW65R095EFD
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
47A
Operating Temperature -:
-55℃~+150℃
RDS(on):
95mΩ
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
4.6pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
4.799nF@50V
Pd - Power Dissipation:
391W
Gate Charge(Qg):
85nC
Mfr. Part #:
ASW65R095EFD
Package:
TO-247-3L
Product Description
Product Overview
The ASW65R095EFD is a Silicon N-Channel MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance (RDS(on)) of 0.082 (typ.) and easy gate control with an enhancement mode. This MOSFET is ideal for use as a Boost PFC switch and in half-bridge, asymmetric half-bridge, resonance half-bridge, and full-bridge topologies. Key application areas include server power, telecom power, EV charging, and solar inverters.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon N-Channel MOS
- Package: TO247
- Marking: ASW65R095EFD
Technical Specifications
| Parameter | Symbol | Value | Unit | Note / Test Condition |
|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA |
| Gate threshold voltage | V(GS)th | 3 - 5 | V | VDS=VGS, ID=250uA |
| Zero gate voltage drain current | IDSS | - 5 | uA | VDS=650V, VGS=0V, Tj=25C |
| Gate-source leakage current | IGSS | - 100 | nA | VGS=30V, VDS=0V |
| Drain-source on-state resistance | RDS(on) | 0.082 - 0.095 | VGS=10V, ID=14A, Tj=25C | |
| Gate resistance | RG | 13 | f=1MHz, open drain | |
| Input capacitance | Ciss | 4799 | pF | VGS=0V, VDS=50V, f=10kHz |
| Output capacitance | Coss | 482 | pF | VGS=0V, VDS=50V, f=10kHz |
| Reverse transfer capacitance | Crss | 4.6 | pF | VGS=0V, VDS=50V, f=10kHz |
| Turn-on delay time | td(on) | 38.8 | ns | VDD=400V,VGS=13V,ID=25.8A, RG=1.7 |
| Rise time | tr | 26.8 | ns | VDD=400V,VGS=13V,ID=25.8A, RG=1.7 |
| Turn-off delay time | td(off) | 134.8 | ns | VDD=400V,VGS=13V,ID=25.8A, RG=1.7 |
| Fall time | tf | 20 | ns | VDD=400V,VGS=13V,ID=25.8A, RG=1.7 |
| Gate to source charge | Qgs | 20 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate to drain charge | Qgd | 30 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate charge total | Qg | 85 | nC | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Gate plateau voltage | Vplateau | 7.4 | V | VDD=400V, ID=25.8A, VGS=0 to 10V |
| Diode forward voltage | VSD | 0.66 | V | VGS=0V, IF=1A, Tj=25C |
| Reverse recovery time | trr | 124.8 | ns | Vr=400v,IF=9.6A,di/dt=100A/us |
| Reverse recovery charge | Qrr | 0.754 | uC | Vr=400v,IF=9.6A,di/dt=100A/us |
| Peak reverse recovery current | Irrm | 11.5 | A | Vr=400v,IF=9.6A,di/dt=100A/us |
| Continuous drain current | ID | 47 | A | TC=25C, Limited by Tj,max. Maximum Duty Cycle D = 0.50 |
| Pulsed drain current | ID,pulse | 141 | A | TC=25C, Pulse width tp limited by Tj,max |
| Avalanche energy, single pulse | EAS | 4623 | mJ | - |
| MOSFET dv/dt ruggedness | dv/dt | 57 | V/ns | VDS=0...400V |
| Reverse diode dv/dt | dv/dt | 50 | V/ns | VDS=0...400V, ISD<=48A, Tj=25C |
| Gate source voltage (static) | VGS | -20 - 20 | V | static |
| Gate source voltage (dynamic) | VGS | -30 - 30 | V | AC (f>1 Hz) |
| Power dissipation | Ptot | 391 | W | TC=25C |
| Storage temperature | Tstg | -55 - 150 | C | - |
| Operating junction temperature | Tj | -55 - 150 | C | - |
| Thermal resistance, junction - case | RthJC | 0.32 | C/W | - |
| Thermal resistance, junction - ambient | RthJA | 62 | C/W | device on PCB, minimal footprint |
2410121609_ANHI-ASW65R095EFD_C5440018.pdf
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