TO247 package AOS AOK30B120D2 Alpha IGBT featuring fast turn off times and smooth current waveforms
Key Attributes
Model Number:
AOK30B120D2
Product Custom Attributes
Td(off):
115ns
Pd - Power Dissipation:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
67nC
Operating Temperature:
-55℃~+175℃@(Tj)
Switching Energy(Eoff):
1.28mJ
Turn-On Energy (Eon):
-
Mfr. Part #:
AOK30B120D2
Package:
TO-247
Product Description
Product Overview
The AOK30B120D2 is an Alpha IGBT with an integrated diode, designed for high-performance applications. It leverages the latest AlphaIGBT ( IGBT) technology, offering low turn-off switching loss due to fast turn-off times and very smooth turn-off current waveforms that reduce EMI. This device provides better thermal management and high surge current capability, with minimal gate spike due to high input capacitance. It is suitable for applications such as induction cooking, rice cookers, microwave ovens, and other soft switching applications. This product has been designed and qualified for the consumer market.
Product Attributes
- Brand: Alpha
- Technology: AlphaIGBT ( IGBT)
- Package Type: TO247
- Minimum Order Quantity: 240
- Revision: 1.0
- Date: December 2014
Technical Specifications
| Parameter | Conditions | Symbol | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Collector-Emitter Voltage | V CE | 1200 | V | |||
| Continuous Collector Current | TC=100C | I C | 30 | A | ||
| Collector-Emitter Saturation Voltage | TC=25C | V CE(sat) | 1.77 | 2.2 | V | |
| Diode Pulsed Current, Limited by TJmax | I Fpulse | 300 | A | |||
| Pulsed Collector Current, Limited by TJmax | I CSM | 200 | A | |||
| Diode Forward Current | TC=25C | I F | 60 | A | ||
| Continuous Collector Current | TC=25C | I C | 60 | A | ||
| Power Dissipation | TC=25C | P D | 340 | W | ||
| Junction and Storage Temperature Range | T J , T STG | -55 | 175 | C | ||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | T L | 300 | C | |||
| Thermal Characteristics | ||||||
| Maximum IGBT Junction-to-Case | TC=100C | R q JC | 0.44 | C/W | ||
| Maximum Diode Junction-to-Case | R q JC | 1.20 | C/W | |||
| Maximum Junction-to-Ambient | R q JA | 40 | C/W | |||
| Electrical Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | TJ=25C | BV CES | 1200 | - | - | V |
| Gate-Emitter Threshold Voltage | TJ=25C | V GE(th) | - | 1.5 | 1.8 | V |
| Zero Gate Voltage Collector Current | VCE=1200V, VGE=0V | I CES | - | - | 10 | nA |
| VGE=0V, IC=30A | I CES | - | - | 100 | A | |
| Diode Forward Voltage | VCE=5V, IC=1mA | V F | - | - | 2.2 | V |
| TJ=25C | V F | - | 1.77 | - | V | |
| TJ=125C | V F | - | 1.6 | - | V | |
| TJ=175C | V F | - | 1.62 | - | V | |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=30A | V CE(sat) | - | 1.77 | 2.2 | V |
| TJ=25C | V CE(sat) | - | 1.77 | - | V | |
| TJ=125C | V CE(sat) | - | 2.2 | - | V | |
| TJ=175C | V CE(sat) | - | 2.43 | - | V | |
| Forward Transconductance | VCE=20V, IC=30A | g FS | - | 28 | - | S |
| Input Capacitance | VGE=0V, VCE=25V, f=1MHz | C ies | - | 1900 | - | pF |
| Output Capacitance | VGE=0V, VCE=25V, f=1MHz | C oes | - | 109 | - | pF |
| Reverse Transfer Capacitance | VGE=0V, VCE=25V, f=1MHz | C res | - | 32 | - | pF |
| Total Gate Charge | VGE=15V, IC=30A | Q g | - | 67 | - | nC |
| Gate to Emitter Charge | VGE=15V, IC=30A | Q ge | - | 16 | - | nC |
| Gate to Collector Charge | VGE=15V, IC=30A | Q gc | - | 32 | - | nC |
| Switching Parameters (Load Inductive, TJ=25C) | ||||||
| Turn-Off Delay Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t D(off) | - | 115 | - | ns |
| Turn-Off Fall Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t f | - | 130 | - | ns |
| Turn-Off Energy | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | E off | - | 1.28 | - | mJ |
| Switching Parameters (Load Inductive, TJ=175C) | ||||||
| Turn-Off Delay Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t D(off) | - | 140 | - | ns |
| Turn-Off Fall Time | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | t f | - | 200 | - | ns |
| Turn-Off Energy | VGE=15V, VCE=600V, IC=30A, RG=10W, Parasitic Inductance=150nH | E off | - | 2.15 | - | mJ |
2504101957_AOS-AOK30B120D2_C17659196.pdf
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